Preliminary Technical Information TM IXTH96N25T V = 250V TrenchHV DSS IXTQ96N25T I = 96A D25 Power MOSFET IXTV96N25T R 29m DS(on) N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G V T = 25C to 150C 250 V (TAB) DSS J D S V T = 25C to 150C, R = 1M 250 V DGR J GS V Transient 30 V GSM TO-3P (IXTQ) I T = 25C 96 A D25 C I Lead Current Limit, RMS 75 A LRMS I T = 25C, pulse width limited by T 250 A DM C JM I T = 25C 5 A AS C G E T = 25C 2 J AS C D (TAB) S P T = 25C 625 W D C T -55 ... +150 C J T 150 C JM PLUS220 (IXTV) T -55 ... +150 C stg T 1.6mm (0.062 in.) from case for 10s 300 C L T Plastic body for 10 seconds 260 C SOLD G M Mounting torque (TO-247 & TO-3P) 1.13 / 10 Nm/lb.in. d D (TAB) S F Mounting force (PLUS220) 11..65 / 2.5..14.6 N/lb. C G = Gate D = Drain Weight TO-247 6.0 g S = Source TAB = Drain TO-3P 5.5 g PLUS220 4.0 g Features z International standard packages z Avalanche rated z Low package inductance - easy to drive and to protect Symbol Test Conditions Characteristic Values Advantages (T = 25C unless otherwise specified) Min. Typ. Max. J z Easy to mount z BV V = 0V, I = 250A 250 V DSS GS D Space savings z High power density V V = V , I = 1mA 3 5 V GS(th) DS GS D I V = 20V, V = 0V 200 nA GSS GS DS Applications I V = V 5 A DSS DS DSS V = 0V T = 125C 250 A z GS J DC-DC converters z Battery chargers R V = 10V, I = 0.5 I , Notes 1, 2 29 m DS(on) GS D D25 z Switched-mode and resonant-mode power supplies z DC choppers z AC motor control z Uninterruptible power supplies 2007 IXYS CORPORATION, All rights reserved DS99863(09/07)IXTH96N25T IXTQ96N25T IXTV96N25T Symbol Test Conditions Characteristic Values TO-247AD Outline (T = 25C unless otherwise specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 50 82 S fs DS D D25 C 6100 pF iss 1 2 3 C V = 0V, V = 25V, f = 1MHz 625 pF oss GS DS C 75 pF rss t 20 ns d(on) Resistive Switching Times t 22 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 59 ns d(off) R = 2.5 (External) G Terminals: 1 - Gate 2 - Drain t 28 ns 3 - Source Tab - Drain f Dim. Millimeter Inches Q 114 nC Min. Max. Min. Max. g(on) A 4.7 5.3 .185 .209 Q V = 10V, V = 0.5 V , I = 25A 33 nC gs GS DS DSS D A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 Q 34 nC 2 gd b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 R 0.20 C/W 1 thJC b 2.87 3.12 .113 .123 2 R 0.25 C/W thCS C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 Source-Drain Diode e 5.20 5.72 0.205 0.225 Symbol Test Conditions Characteristic Values L 19.81 20.32 .780 .800 L1 4.50 .177 T = 25C unless otherwise specified) Min. Typ. Max. J P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 I V = 0V 96 A S GS R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC I Repetitive, pulse width limited by T 300 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS TO-3P (IXTQ) Outline t 158 ns rr I = 48A, -di/dt = 250 A/s F I 23 A RM V = 100 V,V = 0V R GS Q 1.8 C RM Notes: 1. Pulse test, t 300ms duty cycle, d 2%. 2. On through-hole packages, R Kelvin test contact location must be DS(on) 5 mm or less from the package body. PLUS220 (IXTV) Outline Pins: 1 - Gate 2 - Drain 3 - Source 4, TAB - Drain PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537