Preliminary Technical Information X2-Class V = 650V IXTR102N65X2 DSS Power MOSFET I = 54A D25 R 33m DS(on) (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 650 V DSS J V T = 25 C to 150 C, R = 1M 650 V DGR J GS V Continuous 30 V GSS G V Transient 40 V GSM Isolated Tab D S I T = 25 C 54 A D25 C I T = 25 C, Pulse Width Limited by T 204 A DM C JM G = Gate D = Drain I T = 25 C25A A C S = Source E T = 25 C3J AS C P T = 25 C 330 W D C dv/dt I I , V V , T 150C 15 V/ns S DM DD DSS J T -55 ... +150 C J Features T 150 C JM T -55 ... +150 C stg Silicon Chip on Direct-Copper Bond T Maximum Lead Temperature for Soldering 300 C (DCB) Substrate L T 1.6 mm (0.062in.) from Case for 10s 260 C Isolated Mounting Surface SOLD 2500V~ Electrical Isolation V 50/60 Hz, 1 Minute 2500 V ISOL Low Q G Avalanche Rated F Mounting Force 20..120/4.5..27 N/lb C Low Package Inductance Weight 5 g Advantages High Power Density Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 1mA 650 V DSS GS D Applications V V = V , I = 250A 3.0 5.0 V GS(th) DS GS D Switch-Mode and Resonant-Mode I V = 30V, V = 0V 100 nA GSS GS DS Power Supplies DC-DC Converters I V = V , V = 0V 25 A DSS DS DSS GS PFC Circuits T = 125C 500 A J AC and DC Motor Drives R V = 10V, I = 51A, Note 1 33 m DS(on) GS D Robotics and Servo Controls 2018 IXYS CORPORATION, All Rights Reserved DS100681A(4/18)IXTR102N65X2 Symbol Test Conditions Characteristic Values ISOPLUS247 (IXTR) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 51A, Note 1 50 82 S fs DS D R Gate Input Resistance 0.7 Gi C 10.9 nF iss C V = 0V, V = 25V, f = 1MHz 6100 pF oss GS DS C 12.6 pF rss Effective Output Capacitance C 367 pF o(er) Energy related V = 0V GS C 1420 pF V = 0.8 V o(tr) Time related DS DSS t 37 ns 1 = Gate d(on) Resistive Switching Times 2,4 = Drain t 28 ns r V = 10V, V = 0.5 V , I = 51A 3 = Source GS DS DSS D t 67 ns d(off) R = 2 (External) G t 11 ns f Q 152 nC g(on) Q V = 10V, V = 0.5 V , I = 51A 57 nC gs GS DS DSS D Q 33 nC gd R 0.38 C/W thJC R 0.15 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 102 A S GS I Repetitive, Pulse Width Limited by T 408 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 450 ns rr I = 51A, -di/dt = 100A/ s F Q 11.7 C RM V = 100V, V = 0V R GS I 52 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537