Preliminary Technical Information TM TrenchP V = - 200V IXTR120P20T DSS Power MOSFET I = - 90A D25 R 32m DS(on) t 300ns rr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings V T = 25C to 150C - 200 V DSS J V T = 25C to 150C, R = 1M - 200 V DGR J GS G V Continuous 15 V Isolated Tab D GSS S V Transient 25 V GSM I T = 25C - 90 A D25 C G = Gate D = Drain I T = 25C, Pulse Width Limited by T - 400 A S = Source DM C JM I T = 25C -100 A A C E T = 25C3J AS C dv/dt I I , V V , T 150C 10 V/ns S DM DD DSS J Features P T = 25C 595 W D C z T -55 ... +150 C Silicon Chip on Direct-Copper Bond J T 150 C (DCB) Substrate JM z T -55 ... +150 C Isolated Mounting Surface stg z 2500V~ Electrical Isolation T 1.6mm (0.062 in.) from Case for 10s 300 C L z Avalanche Rated T Plastic Body for 10s 260 C SOLD z Extended FBSOA z V 50/60 Hz, 1 Minute 2500 V Fast Intrinsic Rectifier ISOL z Low R and Q DS(ON) G F Mounting Force 20..120/4.5..27 N/lb. C Weight 5 g Advantages z Easy to Mount z Space Savings z High Power Density Symbol Test Conditions Characteristic Values Applications (T = 25C Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = - 250A - 200 V DSS GS D z High-Side Switching z V V = V , I = - 250A - 2.5 - 4.5 V Push Pull Amplifiers GS(th) DS GS D z DC Choppers I V = 15V, V = 0V 200 nA z GSS GS DS Automatic Test Equipment z Current Regulators I V = V , V = 0V - 25 A DSS DS DSS GS z Battery Charger Applications T = 125C - 300 A J R V = -10V, I = - 60A, Note 1 32 m DS(on) GS D 2013 IXYS CORPORATION, All Rights Reserved DS100403A(01/13) IXTR120P20T Symbol Test Conditions Characteristic Values ISOPLUS247 (IXTR) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = - 60A, Note 1 85 145 S fs DS D C 73 nF iss C V = 0V, V = - 25V, f = 1MHz 2550 pF oss GS DS C 480 pF rss t 90 ns d(on) Resistive Switching Times t 85 ns r V = -10V, V = 0.5 V , I = - 60A GS DS DSS D t 200 ns d(off) R = 1 (External) G t 50 ns f 1 = Gate Q 740 nC g(on) 2,4 = Drain 3 = Source Q V = -10V, V = 0.5 V , I = - 60A 220 nC gs GS DS DSS D Q 120 nC gd R 0.21 C/W thJC R 0.15 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V -120 A S GS I Repetitive, Pulse Width Limited by T - 480 A SM JM V I = -100A, V = 0V, Note 1 -1.4 V SD F GS t 300 ns rr I = - 60A, -di/dt = -100A/s F Q 3.3 C RM V = -100V, V = 0V R GS I 25.6 A RM Note 1. Pulse test, t 300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537