X-On Electronics has gained recognition as a prominent supplier of IXTR140P10T MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXTR140P10T MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXTR140P10T IXYS

IXTR140P10T electronic component of IXYS
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See Product Specifications
Part No.IXTR140P10T
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET TrenchP Channel Power MOSFETs
Datasheet: IXTR140P10T Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 21.6565 ea
Line Total: USD 21.66 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 21.6565
2 : USD 20.4759

   
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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We are delighted to provide the IXTR140P10T from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXTR140P10T and other electronic components in the MOSFETs category and beyond.

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The IXTR140P10T is a MOSFET TrenchP Channel Power MOSFET manufactured by IXYS. It is a N-Channel enhancement mode power MOSFET, which is designed to provide high current density and efficient operation in space-constrained environments. It has a threshold voltage of 4.5V, a maximum drain-source voltage of 100V, and a low on-resistance of 3.2mOhm. It has an operating temperature range of -55°C to 150°C, and is available in standard TO-220 package. It is ideal for use in high-power switching applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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