TM PolarP V = -100V IXTR170P10P DSS I = -100A Power MOSFET D25 R 15.4m DS(on) P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C -100 V DSS J V T = 25 C to 150 C, R = 1M -100 V DGR J GS G Isolated Tab D V Continuous 20 V GSS S V Transient 30 V GSM I T = 25 C -100 A G = Gate D = Drain D25 C S = Source I T = 25 C, Pulse Width Limited by T - 510 A DM C JM I T = 25 C -170 A A C E T = 25 C 3.5 J AS C Features dV/dt I I , V V , T 150 C 10 V/ns S DM DD DSS J P T = 25 C 312 W D C Silicon Chip on Direct-Copper Bond (DCB) Substrate T -55 ... +150 C J - UL Recognized Package T 150 C JM - Isolated Mounting Surface T -55 ... +150 C stg - 2500V Electrical Isolation T Maximum Lead Temperature for Soldering 300 C Dynamic dv/dt Rating L T 1.6 mm (0.062in.) from Case for 10s 260 C High Current Handling Capability SOLD Avalanche Rated V 50/60 H ,RMS, t= 1min 2500 V~ ISOL Z Fast Intrinsic Diode M Mounting Force 20..120/4.5..27 N/lb. TM d The Rugged PolarP Process Weight 5 g Low Q G Low Drain-to-Tab Capacitance Low Package Inductance Advantages Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J High Power Density BV V = 0V, I = - 250A -100 V DSS GS D Applications V V = V , I = -1mA - 2.0 - 4.0 V GS(th) DS GS D High-Side Switches I V = 20V, V = 0V 100 nA GSS GS DS Push Pull Amplifiers I V = V V = 0V - 50A DC Choppers DSS DS DSS, GS T = 125C - 250A Automatic Test Equipment J Current Regulators R V = -10V, I = - 85A, Note 1 15.4 m DS(on) GS D 2017 IXYS CORPORATION, All Rights Reserved DS99976C(5/17) IXTR170P10P Symbol Test Conditions Characteristic Values ISOPLUS247 (IXTR) Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = - 85A, Note 1 35 58 S fs DS D C 12.6 nF iss C V = 0V, V = - 25V, f = 1MHz 4190 pF oss GS DS C 930 pF rss t 32 ns d(on) Resistive Switching Times t 75 ns r V = -10V, V = 0.5 V , I = - 85A GS DS DSS D t 82 ns d(off) R = 1 (External) G t 45 ns f 1 - Gate Q 240 nC g(on) 2,4 - Drain Q V = -10V, V = 0.5 V , I = - 85A 45 nC gs GS DS DSS D 3 - Source Q 120 nC gd R 0.40 C/W thJC R 0.15 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V -170 A S GS I Repetitive, Pulse Width Limited by T - 680 A SM JM V I = - 85A, V = 0V, Note 1 - 3.3 V SD F GS t 176 ns rr I = - 85A, -di/dt = -100A/ s F Q 1.25 C RM V = - 50V, V = 0V R GS I -14.2 A RM Note 1: Pulse Test, t 300 s Duty Cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537