TM PolarP V = - 600V IXTR32P60P DSS I = - 18A Power MOSFET D25 R 385m DS(on) P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings V T = 25C to 150C - 600 V DSS J G V T = 25C to 150C, R = 1M - 600 V Isolated Tab D DGR J GS S V Continuous 20 V GSS V Transient 30 V GSM G = Gate D = Drain S = Source I T = 25C -18 A D25 C I T = 25C, Pulse Width Limited by T - 96 A DM C JM I T = 25C - 32 A A C E T = 25C 3.5 J AS C Features dv/dt I I , V V , T 150C 10 V/ns S DM DD DSS J z Silicon Chip on Direct-Copper Bond P T = 25C 310 W D C (DCB) Substrate T -55 ... +150 C J - UL Recognized Package T 150 C JM - Isolated Mounting Surface T -55 ... +150 C stg - 2500V~ Electrical Isolation z Avalanche Rated T 1.6mm (0.062 in.) from Case for 10s 300 C L z TM The Rugged PolarP Process T Plastic Body for 10s 260 C SOLD z Low Q G V 50/60 Hz, 1 Minute 2500 V~ ISOL z Low Drain-to-Tab Capacitance z M Mounting Force 20..120/4.5..27 N/lb. Low Package Inductance d Weight 5 g Advantages z Easy to Mount z Space Savings z High Power Density Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = - 250A - 600 V DSS GS D z High-Side Switches V V = V , I = -1mA - 2.0 - 4.0 V GS(th) DS GS D z Push Pull Amplifiers z I V = 20V, V = 0V 100 nA GSS GS DS DC Choppers z Automatic Test Equipment I V = V , V = 0V - 50 A DSS DS DSS GS z Current Regulators T = 125C - 250 A J R V = -10V, I = -16A, Note 1 385 m DS(on) GS D 2012 IXYS CORPORATION, All Rights Reserved DS99992B(12/12) IXTR32P60P Symbol Test Conditions Characteristic Values ISOPLUS247 (IXTR) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = -16A, Note 1 21 32 S fs DS D C 11.1 nF iss C V = 0V, V = - 25V, f = 1MHz 925 pF oss GS DS C 77 pF rss t 37 ns d(on) Resistive Switching Times t 27 ns r V = -10V, V = 0.5 V , I = -16A GS DS DSS D t 95 ns d(off) R = 1 (External) G t 33 ns f Q 196 nC 1 - Gate g(on) 2,4 - Drain Q V = -10V, V = 0.5 V , I = -16A 54 nC gs GS DS DSS D 3 - Source Q 58 nC gd R 0.40 C/W thJC R 0.15 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V - 32 A S GS I Repetitive, Pulse Width Limited by T - 128 A SM JM V I = -16A, V = 0V, Note 1 - 2.8 V SD F GS t 480 ns rr I = -16A, -di/dt = -150A/s F Q 11.4 C RM V = -100V, V = 0V R GS I - 47.6 A RM Note 1: Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537