V = 1000V High Voltage IXTH10N100D DSX I = 10A MOSFET IXTT10N100D D25 R 1.4 DS(on) N-Channel, Depletion Mode TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings S D (Tab) V T = 25 C to 150 C 1000 V DSX J V T = 25 C to 150 C, R = 1M 1000 V DGX J GS V Continuous 30 V TO-247 (IXTH) GSX V Transient 40 V GSM I T = 25 C10A D25 C I T = 25 C, Pulse Width Limited by T 20 A DM C JM G P T = 25 C 400 W D D C D (Tab) S T - 55 ... +150 C J T 150 C JM G = Gate D = Drain T - 55 ... +150 C stg S = Source Tab = Drain T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD M Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in. d Weight TO-268 4 g Features TO-247 6 g Normally ON Mode International Standard Packages Molding Epoxies meet UL 94 V-0 Flammability Classification Symbol Test Conditions Characteristic Values Advantages (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV V = -10V, I = 250 A 1000 V Easy to Mount DSX GS D Space Savings V V = 25V, I = 250 A -1.5 - 3.5 V GS(off) DS D High Power Density I V = 30V, V = 0V 100 nA GSX GS DS I V = V , V = -10V 25 A Applications DSX(off) DS DSX GS T = 125C 500A J Level Shifting R V = 10V, I = 10A, Note 1 1.4 Triggers DS(on) GS D Solid State Relays I V = 0V, V = 25V, Note 1 1.0 A D(on) GS DS Current Regulators Active Load 2018 IXYS CORPORATION, All Rights Reserved DS99529D(8/17) IXTT10N100D IXTH10N100D Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 30V, I = 0.5 I , Note 1 3.0 5.4 S fs DS D D25 C 2500 pF iss C V = -10V, V = 25V, f = 1MHz 300 pF oss GS DS C 100 pF rss t 35 ns d(on) Resistive Switching Times t 85 ns r V = -10V, V = 0.5 V , I = 0.5 I GS DS DSX D D25 t 110 ns d(off) R = 4.7 (External) G t 75 ns f Q 130 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 27 nC gs GS DS DSX D D25 Q 58 nC gd R 0.31 C/W thJC R TO-247 0.21 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J V I = I , V = -10V, Note 1 1.1 1.5 V SD F D25 GS I = 10A, -di/dt = 100A/ s t 850 ns F rr V = 100V, V = -10V R GS Note 1: Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537