Preliminary Technical Information Depletion Mode V = 1000V IXTH10N100D2 DSX MOSFET I > 10A IXTT10N100D2 D(on) R 1.5 DS(on) D N-Channel TO-247 (IXTH) G S G D D (Tab) S Symbol Test Conditions Maximum Ratings TO-268 (IXTT) V T = 25 C to 150 C 1000 V DSX J V T = 25 C to 150 C, R = 1M 1000 V DGX J GS G V Continuous 20 V GSX S V Transient 30 V GSM D (Tab) P T = 25 C 695 W D C T - 55 ... +150 C J G = Gate D = Drain T 150 C JM S = Source Tab = Drain T - 55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD M Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in. Features d Weight TO-247 6 g Normally ON Mode TO-268 4 g International Standard Packages Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Easy to Mount Space Savings BV V = - 5V, I = 250A 1000 V DSX GS D High Power Density V V = 25V, I = 1mA - 2.5 - 4.5 V GS(off) DS D Applications I V = 20V, V = 0V 100 nA GSX GS DS Audio Amplifiers I V = V , V = - 5V 10 A DSX(off) DS DSX GS Start-up Circuits T = 125C 250A J Protection Circuits R V = 0V, I = 5A, Note 1 1.5 Ramp Generators DS(on) GS D Current Regulators I V = 0V, V = 25V, Note 1 10 A D(on) GS DS Active Loads 2017 IXYS CORPORATION, All Rights Reserved DS100326A(4/17) IXTH10N100D2 IXTT10N100D2 Symbol Test Conditions Characteristic Values TO-247 Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 30V, I = 5A, Note 1 11 17 S fs DS D C 5320 pF iss P C V = -10V, V = 25V, f = 1MHz 300 pF 1 2 3 oss GS DS C 70 pF rss t 33 ns d(on) Resistive Switching Times t 36 ns r V = + 5V, V = 500V, I = 5A GS DS D t 33 ns d(off) e R = 3.3 (External) G t 164 ns f Terminals: 1 - Gate 2 - Drain 3 - Source Q 200 nC g(on) Dim. Millimeter Inches Q V = + 5V, V = 500V, I = 5A 19 nC gs GS DS D Min. Max. Min. Max. A 4.7 5.3 .185 .209 Q 98 nC gd A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 R 0.18 C/W 2 thJC b 1.0 1.4 .040 .055 R TO-247 0.21 C/W thCS b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 Safe-Operating-Area Specification E 15.75 16.26 .610 .640 Characteristic Values e 5.20 5.72 0.205 0.225 Symbol Test Conditions Min. Typ. Max. L 19.81 20.32 .780 .800 L1 4.50 .177 SOA V = 800V, I = 0.22A, T = 75 C, tp = 5s 176 W DS D C P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 Source-Drain Diode R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J TO-268 Outline V I = 10A, V = -10V, Note 1 0.8 1.3 V SD F GS t 1.2 s rr I = 5A, -di/dt = 100A/ s F I 23 A RM V = 100V, V = -10V R GS Q 13.8 C RM Note 1. Pulse test, t 300s, duty cycle, d 2%. Terminals: 1 - Gate 2,4 - Drain 3 - Source PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537