TM IXTQ 110N10P V = 100 V DSS PolarHT IXTT 110N10P I =110 A D25 Power MOSFET R 15 m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings V T = 25 C to 175 C 100 V DSS J V T = 25 C to 175 C R = 1 M 100 V DGR J GS V Continuous 20 V GS V Transient 30 V GSM G I T = 25 C 110 A D (TAB) D25 C S I External lead current limit 75 A D(RMS) I T = 25 C, pulse width limited by T 250 A DM C JM I T = 25C60A AR C TO-268 (IXTT) E T = 25C40mJ AR C E T = 25 C 1.0 J AS C dv/dt I I , di/dt 100 A/s, V V , 10 V/ns S DM DD DSS G S D (TAB) T 150C, R = 4 J G P T = 25 C 480 W G = Gate D = Drain D C S = Source TAB = Drain T -55 ... +175 C J T 175 C JM Features T -55 ... +150 C stg l International standard packages T 1.6 mm (0.062 in.) from case for 10 s 300 C L l T Plastic body for 10 s 260 C Unclamped Inductive Switching (UIS) SOLD rated M Mounting torque (TO-3P) 1.13/10 Nm/lb.in. l d Low package inductance - easy to drive and to protect Weight TO-3P 5.5 g TO-268 5.0 g Advantages Symbol Test Conditions Characteristic Values l Easy to mount (T = 25 C, unless otherwise specified) Min. Typ. Max. J l Space savings BV V = 0 V, I = 250 A 100 V l DSS GS D High power density V V = V , I = 250A 2.5 5.0 V GS(th) DS GS D I V = 20 V , V = 0 100 nA GSS GS DC DS I V = V 25 A DSS DS DSS V = 0 V T = 150 C 250 A GS J R V = 10 V, I = 0.5 I 15 m DS(on) GS D D25 Pulse test, t 300 s, duty cycle d 2 % DS99132E(12/05) 2006 IXYS All rights reserved IXTQ 110N10P IXTT 110N10P TO-3P (IXTQ) Outline Symbol Test Conditions Characteristic Values (T = 25 C, unless otherwise specified) J Min. Typ. Max. g V = 10 V I = 0.5 I , pulse test 30 40 S fs DS D D25 C 3550 pF iss C V = 0 V, V = 25 V, f = 1 MHz 1370 pF oss GS DS C 440 pF rss t 21 ns d(on) t V = 10 V, V = 0.5 V , I = 0.5 I 25 ns r GS DS DSS D D25 t R = 4 (External) 65 ns d(off) G t 25 ns f Q 110 nC g(on) Q V = 10 V, V = 0.5 V , I = 0.5 I 25 nC gs GS DS DSS D D25 Q 62 nC gd R 0.31C/W thJC R (TO-3P) 0.21 C/W thCS Source-Drain Diode Characteristic Values (T = 25 C, unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. I V = 0 V 110 A S GS TO-268 (IXTT) Outline I Repetitive 250 A SM V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = 25 A, -di/dt = 100 A/s 130 ns rr F Q V = 50 V, V = 0 V 2.0 C RM R GS IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2