TM IXTQ 120N15P V = 150 V DSS PolarHT IXTT 120N15P I = 120 A D25 Power MOSFET R 16 m DS(on) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) V T = 25 C to 175 C 150 V DSS J V T = 25 C to 175 C R = 1 M 150 V DGR J GS V Continuous 20 V DSS V Transient 30 V GSM I T = 25 C 120 A G D25 C D (TAB) S I External lead current limit 75 A D(RMS) I T = 25 C, pulse width limited by T 260 A DM C JM I T = 25C60A AR C E T = 25C60mJ TO-268 (IXTT) AR C E T = 25 C 2.0 J AS C dv/dt I I , di/dt 100 A/s, V V , 10 V/ns S DM DD DSS G T 150C, R = 4 J G S D (TAB) P T = 25 C 600 W D C T -55 ... +175 C J G = Gate D = Drain T 175 C JM S = Source TAB = Drain T -55 ... +150 C stg T 1.6 mm (0.062 in.) from case for 10 s 300 C L T Plastic body for 10 s 260 C SOLD Features M Mounting torque (TO-3P) 1.13/10 Nm/lb.in. d l Weight TO-3P 5.5 g International standard packages TO-268 5.0 g l Unclamped Inductive Switching (UIS) rated l Low package inductance Symbol Test Conditions Characteristic Values - easy to drive and to protect (T = 25 C, unless otherwise specified) Min. Typ. Max. J BV V = 0 V, I = 250 A 150 V DSS GS D Advantages V V = V , I = 250A 3.0 5.0 V GS(th) DS GS D l Easy to mount l I V = 20 V , V = 0 100 nA Space savings GSS GS DC DS l High power density I V = V 25 A DSS DS DSS V = 0 V T = 175 C 500 A GS J R V = 10 V, I = 0.5 I 16 m DS(on) GS D D25 Pulse test, t 300 s, duty cycle d 2 % DS99280E(10/05) 2005 IXYS All rights reserved IXTQ 120N15P IXTT 120N15P Symbol Test Conditions Characteristic Values TO-3P (IXTQ) Outline (T = 25 C, unless otherwise specified) J Min. Typ. Max. g V = 10 V I = 0.5 I , pulse test 40 60 S fs DS D D25 C 4900 pF iss C V = 0 V, V = 25 V, f = 1 MHz 1300 pF oss GS DS C 330 pF rss t 33 ns d(on) t V = 10 V, V = 0.5 V , I = 60 A 42 ns r GS DS DSS D t R = 4 (External) 85 ns d(off) G t 26 ns f Q 150 nC g(on) Q V = 10 V, V = 0.5 V , I = 0.5 I 40 nC gs GS DS DSS D D25 Q 80 nC gd R 0.25 C/W thJC R (TO-3P) 0.21 C/W thCS Source-Drain Diode Characteristic Values (T = 25 C, unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. I V = 0 V 120 A S GS TO-268 Outline I Repetitive 260 A SM V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = 25 A, -di/dt = 100 A/s 150 ns rr F Q V = 100 V, V = 0 V 2.3 C RM R GS IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2