High Voltage V = 1500V IXTT12N150HV DSS I = 12A Power MOSFET D25 R 2.2 DS(on) N-Channel Enhancement Mode Fast Intrinsic Diode TO-268HV G Symbol Test Conditions Maximum Ratings S V T = 25 C to 150 C 1500 V D (Tab) DSS J V T = 25 C to 150 C, R = 1M 1500 V DGR J GS G = Gate D = Drain V Continuous 30 V GSS S = Source Tab = Drain V Transient 40 V GSM I T = 25 C12A D25 C I T = 25 C, Pulse Width Limited by T 40 A DM C JM I T = 25C 6 A A C E T = 25C 750 mJ AS C dv/dt I I , V V ,T 150 C 5 V/ns Features S DM DD DSS J P T = 25 C 890 W D C High Blocking Voltage T - 55 ... +150 C High Voltage Package J T 150 C Fast Intrinsic Diode JM T - 55 ... +150 C Low Package Inductance stg T Maximum Lead Temperature for Soldering 300 C L T Plastic Body for 10s 260 C SOLD Advantages Weight 4 g Easy to Mount Space Savings High Power Density Symbol Test Conditions Characteristic Values Applications (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 1mA 1500 V High Voltage Power Supplies DSS GS D Capacitor Discharge V V = V , I = 250A 2.5 4.5 V GS(th) DS GS D Pulse Circuits I V = 30V, V = 0V 100 nA GSS GS DS I V = V , V = 0V 25 A DSS DS DSS GS T = 125C 500A J R V = 10V, I = 0.5 I , Note 1 2.2 DS(on) GS D D25 2015 IXYS CORPORATION, All Rights Reserved DS100530B(6/15)IXTT12N150HV Symbol Test Conditions Characteristic Values TO-268HV Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 8 13 S fs DS D D25 C 3720 pF iss C V = 0V, V = 25V, f = 1MHz 240 pF oss GS DS C 80 pF rss t 26 ns d(on) Resistive Switching Times PINS: t 16 ns r 1 - Gate V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 2 - Source t 53 ns d(off) 3 - Drain R = 2 (External) G t 14 ns f Q 106 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 17 nC gs GS DS DSS D D25 Q 50 nC gd R 0.14 C/W thJC Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 12 A S GS I Repetitive, Pulse Width Limited by T 48 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 1.2 s rr I = 6A, -di/dt = 100A/ s F I 24.5 A RM V = 100V, V = 0V R GS Q 14.8 C RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537