Depletion Mode V = 500V IXTH16N50D2 DSX MOSFET I > 16A IXTT16N50D2 D(on) R 300m DS(on) D N-Channel TO-247 (IXTH) G S G Symbol Test Conditions Maximum Ratings D D (Tab) S V T = 25 C to 150 C 500 V DSX J V T = 25 C to 150 C, R = 1M 500 V DGX J GS V Continuous 20 V GSX TO-268 (IXTT) V Transient 30 V GSM P T = 25 C 695 W D C G T - 55 ... +150 C J S T 150 C JM D (Tab) T - 55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L G = Gate D = Drain T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD S = Source Tab = Drain M Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in. d Weight TO-247 6 g TO-268 4 g Features Normally ON Mode International Standard Packages Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Easy to Mount Space Savings BV V = - 5V, I = 250A 500 V DSX GS D High Power Density V V = 25V, I = 4mA - 2.0 - 4.0 V GS(off) DS D Applications I V = 20V, V = 0V 100 nA GSX GS DS Audio Amplifiers I V = V , V = - 5V 10 A DSX(off) DS DSX GS Start-up Circuits T = 125C 150A J Protection Circuits R V = 0V, I = 8A, Note 1 300 m Ramp Generators DS(on) GS D Current Regulators I V = 0V, V = 25V, Note 1 16 A D(on) GS DS Active Loads 2017 IXYS CORPORATION, All Rights Reserved DS100261C(4/17) IXTH16N50D2 IXTT16N50D2 Symbol Test Conditions Characteristic Values TO-247 Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 30V, I = 8A, Note 1 7 12 S fs DS D C 5250 pF iss P C V = -10V, V = 25V, f = 1MHz 515 pF 1 2 3 oss GS DS C 130 pF rss t 50 ns d(on) Resistive Switching Times t 173 ns r V = + 5V, V = 250V, I = 8A GS DS D t 203 ns d(off) e R = 3.3 (External) G t 220 ns f Terminals: 1 - Gate 2 - Drain 3 - Source Q 199 nC g(on) Dim. Millimeter Inches Q V = + 5V, V = 250V, I = 8A 18 nC gs GS DS D Min. Max. Min. Max. A 4.7 5.3 .185 .209 Q 100 nC gd A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 R 0.18 C/W 2 thJC b 1.0 1.4 .040 .055 R TO-247 0.21 C/W thCS b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 Safe-Operating-Area Specification E 15.75 16.26 .610 .640 Characteristic Values e 5.20 5.72 0.205 0.225 Symbol Test Conditions Min. Typ. Max. L 19.81 20.32 .780 .800 L1 4.50 .177 SOA V = 500V, I = 0.5A, T = 75 C, tp = 5s 250 W DS D C P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Source-Drain Diode TO-268 Outline Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J V I = 16A, V = -10V, Note 1 0.8 1.3 V SD F GS t 695 ns rr I = 8A, -di/dt = 100A/ s F I 20 A RM V = 100V, V = -10V R GS Q 7 C RM Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537