Advance Technical Information High Voltage V = 2500V IXTT1N250HV DSS I = 1.5A Power MOSFET D25 R 40 DS(on) N-Channel Enhancement Mode Fast Intrinsic Diode TO-268S G S D (Tab) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 2500 V G = Gate D = Drain DSS J S = Source Tab = Drain V T = 25C to 150C, R = 1M 2500 V DGR J GS V Continuous 20 V GSS V Transient 30 V GSM I T = 25C 1.5 A D25 C I T = 25C, Pulse Width Limited by T 6A DM C JM P T = 25C 250 W D C Features T - 55 ... +150 C J T 150 C JM z High Blocking Voltage T - 55 ... +150 C stg z High Voltage Package z T 1.6mm (0.062 in.) From Case for 10s 300 C Fast Intrinsic Diode L z T Plastic Body for 10s 260 C Low Package Inductance SOLD Weight 4 g Advantages z Easy to Mount z Space Savings z High Power Density Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 250A 2500 V DSS GS D z High Voltage Power Supplies z V V = V , I = 250A 2.0 4.0 V Capacitor Discharge GS(th) DS GS D z Pulse Circuits I V = 20V, V = 0V 100 nA GSS GS DS I V = 0.8 V , V = 0V 25 A DSS DS DSS GS T = 125C 25 A J R V = 10V, I = 0.5 I , Note 1 40 DS(on) GS D D25 2012 IXYS CORPORATION, All Rights Reserved DS100521(12/12)IXTT1N250HV Symbol Test Conditions Characteristic Values TO-268 (VHV) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 50V, I = 0.5A, Note 1 1.0 1.8 mS fs DS D C 1660 pF iss C V = 0V, V = 25V, f = 1MHz 77 pF oss GS DS C 23 pF rss PIN: 1 - Gate t 69 ns d(on) 2 - Source Resistive Switching Times 3 - Drain t 25 ns r V = 10V, V = 0.5 V , I = 1A GS DS DSS D t 132 ns d(off) R = 5 (External) G t 39 ns f Q 41 nC g(on) Q V = 10V, V = 600V, I = 0.5A 8 nC gs GS DS D Q 16 nC gd R 0.50 C/W thJC R 0.21 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 1.5 A S GS I Repetitive, Pulse Width Limited by T 6 A SM JM V I = 1A, V = 0V, Note 1 1.5 V SD F GS t I = 1A, -di/dt = 100A/ s, V = 200V 2.5 s rr F R Note 1. Pulse test, t 300 s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537