High Voltage V = 4500V IXTT1N450HV DSS Power MOSFET I = 1A IXTH1N450HV D25 R 80 DS(on) N-Channel Enhancement Mode TO-268HV (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-247HV (IXTH) V T = 25 C to 150 C 4500 V DSS J V T = 25 C to 150 C, R = 1M 4500 V DGR J GS V Continuous 20 V GSS V Transient 30 V GSM G I T = 25 C1A D25 C S I T = 25 C, Pulse Width Limited by T 3A DM C JM D (Tab) D P T = 25 C 520 W D C T - 55 ... +150 C J G = Gate D = Drain T 150 C JM S = Source Tab = Drain T - 55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD F Mounting Force (TO-263HV) 10..65 / 22..14.6 N/lb C Features M Mounting Torque (TO-247HV) 1.13/10 Nm/lb.in d Weight TO-263HV 2.5 g High Blocking Voltage TO-247HV 6.0 g High Voltage Package Advantages Symbol Test Conditions Characteristic Values Easy to Mount (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Space Savings High Power Density V V = V , I = 250A 3.5 6.0 V GS(th) DS GS D I V = 20V, V = 0V 100 nA GSS GS DS I V = 3.6kV, V = 0V 5 A DSS DS GS Applications V = 4.5kV 25 A DS V = 3.6kV T = 100C 15 A DS J High Voltage Power Supplies Capacitor Discharge Applications R V = 10V, I = 50mA, Note 1 80 DS(on) GS D Pulse Circuits Laser and X-Ray Generation Systems 2014 IXYS CORPORATION, All Rights Reserved DS100500D(04/14)IXTT1N450HV IXTH1N450HV Symbol Test Conditions Characteristic Values TO-268HV Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. E A E1 J L2 C2 g V = 50V, I = 200mA, Note 1 0.40 0.70 S fs DS D 3 D1 3 D H D2 C 1700 pF iss 1 2 D3 2 1 A1 L4 C V = 0V, V = 25V, f = 1MHz 80 pF oss GS DS C e e b C 29 pF rss PINS: 1 - Gate R Gate Input Resistance 12 Gi 2 - Source 3 - Drain t 30 ns d(on) Resistive Switching Times L3 t 43 ns r A2 V = 10V, V = 500V, I = 0.5 I GS DS D D25 L t 73 ns d(off) R = 10 (External) G t 120 ns f Q 46 nC g(on) Q V = 10V, V = 1kV, I = 0.5 I 8 nC gs GS DS D D25 Q 23 nC gd R 0.24 C/W thJC R TO-247HV 0.21 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J TO-247HV Outline I V = 0V 1 A E1 E A S GS R 0P A2 0P1 Q S I Repetitive, Pulse Width Limited by T 5 A SM JM D1 D V I = 1A, V = 0V, Note 1 2.0 V 4 SD F GS D2 t I = 1A, -di/dt = 50A/ s, V = 100V 1.75 s 1 2 3 rr F R L1 A3 D3 E2 2X E3 A1 4X L e b b1 c e1 3X 3X PINS: 1 - Gate 2 - Source Note 1. Pulse test, t 300 s, duty cycle, d 2%. 3, 4 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537