V = 500V High Voltage MOSFET IXTH20N50D DSX I = 20A IXTT20N50D D25 R 330m N-Channel, Depletion Mode DS(on) TO-268 (IXTT) G S D (TAB) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 500 V TO-247 (IXTH) DSX J V T = 25C to 150C, R = 1M 500 V DGX J GS V Continuous 30 V GSX V Transient 40 V GSM I T = 25C 20 A D25 C I T = 25C, Pulse Width Limited by T 50 A D (TAB) DM C JM G D P T = 25C 400 W S D C T - 55 ... +150 C J G = Gate D = Drain T 150 C JM S = Source TAB = Drain T - 55 ... +150 C stg T 1.6mm (0.062 in.) from Case for 10s 300 C L T Plastic Body for 10s 260 C SOLD M Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in. d Features Weight TO-268 4 g Normally ON Mode TO-247 6 g International Standard Packages Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. Easy to Mount J Space Savings BV V = -10V, I = 250A 500 V DSX GS D High Power Density V V = 25V, I = 250A -1.5 - 3.5 V GS(off) DS D I V = 30V, V = 0V 100 nA Applications GSS GS DS I V = V , V = -10V 25 A DSS DS DSX GS Level Shifting T = 125C 500 A J Triggers Solid State Relays R V = 10V, I = 10A, Note 1 330 m DS(on) GS D Current Regulators I V = 0V, V = 25V, Note 1 2.3 A Active Load D(on) GS DS 2009 IXYS CORPORATION, All Rights Reserved DS99192B(5/09) IXTH20N50D IXTT20N50D Symbol Test Conditions Characteristic Values TO-247 (IXTH) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 30V, I = 0.5 I , Note 1 4.0 6.5 9.0 S fs DS D D25 C 6300 pF iss P C V = -10V, V = 25V, f = 1MHz 385 pF oss GS DS 1 2 3 C 82 pF rss t 35 ns d(on) Resistive Switching Times t 85 ns r V = -10V, V = 0.5 V , I = 0.5 I GS DS DSX D D25 t 110 ns d(off) R = 4.7 (External) e G t 75 ns f Terminals: 1 - Gate 2 - Drain Q 78.5 nC g(on) 3 - Source Tab - Drain Dim. Millimeter Inches Q V = 10V, V = 0.5 V , I = 0.5 I 19.2 nC gs GS DS DSX D D25 Min. Max. Min. Max. Q 35.0 nC gd A 4.7 5.3 .185 .209 2.2 2.54 .087 .102 A 1 R 0.31 C/W A 2.2 2.6 .059 .098 thJC 2 b 1.0 1.4 .040 .055 R 0.21 C/W thCS b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 Safe Operating Area Specification E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 Symbol Test Conditions Min. Typ. Max. L 19.81 20.32 .780 .800 L1 4.50 .177 SOA V = 400V, I = 0.6A, T = 75C, t = 3s 240 W DS D C P P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Source-Drain Diode Symbol Test Conditions Characteristic Values TO-268 (IXTT) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J V I = I , V = -10V, Note 1 0.75 1.4 V SD F D25 GS t 590 ns rr I = 20A, -di/dt = 100A/s F I 32.6 A RM V = 100V, V = -10V R GS Q 9.6 C RM Note 1: Pulse Test, t 300s Duty Cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537