Advance Technical Information High Voltage V = 3000V IXTT2N300P3HV DSS Power MOSFET I = 2A IXTH2N300P3HV D25 R 21 DS(on) TO-268HV (IXTT) N-Channel Enhancement Mode G S D (Tab) TO-247HV (IXTH) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 3000 V DSS J V T = 25 C to 150 C, R = 1M 3000 V DGR J GS V Continuous 20 V GSS V Transient 30 V GSM G S I T = 25 C 2.0 A D25 C D (Tab) D I T = 110 C 1.6 A D110 C I T = 25 C, Pulse Width Limited by T 6.0 A DM C JM G = Gate D = Drain P T = 25 C 520 W S = Source Tab = Drain D C T - 55 ... +150 C J T 150 C JM T - 55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L Features T Plastic Body for 10s 260 C SOLD M Mounting Torque 1.13/10 Nm/lb.in High Blocking Voltage d High Voltage Packages Weight TO-268HV 4 g TO-247HV 6 g Advantages Easy to Mount Space Savings High Power Density Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 250 A 3000 V Applications DSS GS D V V = V , I = 250A 3.0 5.0 V GS(th) DS GS D High Voltage Power Supplies Capacitor Discharge Applications I V = 20V, V = 0V 100 nA GSS GS DS Pulse Circuits I V = V , V = 0V 10 A Laser and X-Ray Generation Systems DSS DS DSS GS T = 125C 250 A J R V = 10V, I = 1A, Note 1 21 DS(on) GS D 2015 IXYS CORPORATION, All Rights Reserved DS100686(8/15)IXTT2N300P3HV IXTH2N300P3HV Symbol Test Conditions Characteristic Values TO-268HV Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. E A E1 J L2 C2 g V = 50V, I = 1A, Note 1 1.8 3.0 S fs DS D 3 D1 3 D H D2 C 1890 pF iss 1 2 D3 2 1 A1 L4 C V = 0V, V = 25V, f = 1MHz 90 pF oss GS DS C e e b C 42 pF rss R Gate Input Resistance 7.7 PINS: Gi 1 - Gate 2 - Source 3 - Drain t 21 ns d(on) Resistive Switching Times L3 t 17 ns r A2 V = 10V, V = 500V, I = 0.5 I GS DS D D25 L t 69 ns d(off) R = 5 (External) G t 62 ns f Q 73 nC g(on) Q V = 10V, V = 1.5kV, I = 0.5 I 9 nC gs GS DS D D25 Q 40 nC gd R 0.24 C/W thJC R TO-247HV 0.21 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J TO-247HV Outline I V = 0V 2.0 A S GS E1 E A R 0P A2 0P1 I Repetitive, Pulse Width Limited by T 8.0 A SM JM Q S V I = I , V = 0V, Note 1 1.5 V D1 SD F S GS D 4 t 400 ns rr I = 1A, -di/dt = 100A/ s D2 F 1 2 3 Q 250 nC L1 A3 RM D3 E2 2X V = 100V, V = 0V R GS E3 I 1.3 A A1 4X RM L e b b1 c e1 3X 3X Note: 1. Pulse test, t 300s, duty cycle, d 2%. PINS: 1 - Gate 2 - Source 3, 4 - Drain ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537