TM V = 500 V IXTH 30N50P PolarHV DSS I = 30 A IXTQ 30N50P Power MOSFET D25 R 200 m IXTT 30N50P DS(on) N-Channel Enhancement Mode IXTV 30N50P Avalanche Rated IXTV 30N50PS TO-247 AD (IXTH) (TAB) Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) V T = 25 C to 150 C 500 V DSS J V T = 25 C to 150 C R = 1 M 500 V DGR J GS V Continuous 30 V GSS V Transient 40 V GSM G D (TAB) I T = 25C30A S D25 C I T = 25 C, pulse width limited by T 75 A DM C JM TO-268 (IXTT) I T = 25C30A AR C E T = 25C40mJ AR C E T = 25 C 1.2 J AS C G S dv/dt I I , di/dt 100 A/s, V V , 10 V/ns S DM DD DSS (TAB) T 150C, R = 5 J G PLUS220 (IXTV) P T = 25 C 460 W D C T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg G D S (TAB) T 1.6 mm (0.062 in.) from case for 10 s 300 C L T Plastic body for 10 s 260 C SOLD PLUS220 SMD(IXTV..S) M Mounting torque (TO-247, TO-3P) 1.13/10 Nm/lb.in. d F Mounting force (PLUS220, PLUS220SMD) 11 65/2.5 15 N/lb. C Weight PLUS220, PLUS220SMD 4 g TO-268 5 g G TO-3P 5.5 g S (TAB) TO-247 6 g G = Gate D = Drain S = Source TAB = Drain Symbol Test Conditions Characteristic Values (T = 25 C, unless otherwise specified) Min. Typ. Max. J Features l BV V = 0 V, I = 250 A 500 V International standard packages DSS GS D l Unclamped Inductive Switching (UIS) V V = V , I = 250 A 3.0 5.0 V GS(th) DS GS D rated l Low package inductance I V = 30 V, V = 0 V 100 nA GSS GS DS - easy to drive and to protect I V = V 25 A DSS DS DSS Advantages V = 0 V T = 125 C 250 A l GS J Easy to mount l Space savings R V = 10 V, I = 0.5 I 165 200 m DS(on) GS D D25 l Pulse test, t 300 s, duty cycle d 2 % High power density DS99415E(04/06) 2006 IXYS All rights reservedIXTH 30N50P IXTQ 30N50P IXTT 30N50P IXTV 30N50P IXTV 30N50PS Symbol Test Conditions Characteristic Values (T = 25 C, unless otherwise specified) J Min. Typ. Max. g V = 20 V I = 0.5 I , pulse test 17 27 S fs DS D D25 C 4150 pF iss C V = 0 V, V = 25 V, f = 1 MHz 445 pF oss GS DS C 28 pF rss t 25 ns d(on) t V = 10 V, V = 0.5 V , I = 0.5 I 27 ns r GS DS DSS D D25 t R = 5 (External) 75 ns d(off) G t 21 ns f Q 70 nC g(on) Q V = 10 V, V = 0.5 V , I = 0.5 I 27 nC gs GS DS DSS D D25 Q 22 nC gd R 0.27 C/W thJC R (TO-247, TO-3P and PLUS220) 0.21 C/W thCS Source-Drain Diode Characteristic Values (T = 25 C, unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. I V = 0 V 30 A S GS I Repetitive 90 A SM V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = 18 A, -di/dt = 100 A/s 400 ns rr F Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics 25C 25C 30 70 V = 10V V = 10V GS GS 27 8V 8V 60 24 50 21 7V 7V 18 40 15 30 12 9 6V 20 6 10 6V 3 0 0 01 2 345 67 0 3 6 9 12 15 18 21 24 27 30 V - Volts V - Volts D S D S IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 I - Amperes D I - Amperes D