TM IXTH 36N50P V = 500 V PolarHV DSS IXTQ 36N50P I = 36 A Power MOSFET D25 IXTT 36N50P R 170 m DS(on) IXTV 36N50P N-Channel Enhancement Mode Avalanche Rated IXTV 36N50PS TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 500 V DSS J G V T = 25 C to 150 C R = 1 M 500 V DGR J GS (TAB) D S V Continuous 30 V GS V Transient 40 V GSM TO-247 (IXTH) I T = 25C36A D25 C I T = 25 C, pulse width limited by T 108 A DM C JM I T = 25C36A (TAB) AR C E T = 25C50mJ AR C E T = 25 C 1.5 J AS C TO-268 (IXTT) dv/dt I I , di/dt 100 A/s, V V , 10 V/ns S DM DD DSS T 150 C, R = 3 J G P T = 25 C 540 W D C G T -55 ... +150 C J S D (TAB) T 150 C JM T -55 ... +150 C stg T 1.6 mm (0.062 in.) from case for 10 s 300 C L PLUS220 (IXTV) T Plastic body for 10 s 260 C SOLD M Mounting torque(TO-247) 1.13/10 Nm/lb.in. d F Mounting force (PLUS220) 20..120/4.5..15 N/lb C G D (TAB) D Weight TO-247 6 g S TO-268 5 g PLUS220 2 g PLUS220 SMD(IXTV..S) TO-3P 5.5 g Symbol Test Conditions Characteristic Values G (T = 25 C unless otherwise specified) Min. Typ. Max. J S D (TAB) V V = 0 V, I = 250 A 500 V DSS GS D G = Gate D = Drain S = Source TAB = Drain V V = V , I = 250 A 3.0 5.0 V GS(th) DS GS D I V = 30 V , V = 0 100 nA GSS GS DC DS Features l International standard packages I V = V 25 A DSS DS DSS l Unclamped Inductive Switching (UIS) V = 0 V T = 125 C 250 A GS J rated l R V = 10 V, I = 0.5 I 170 m Low package inductance DS(on) GS D D25 Pulse test, t 300 s, duty cycle d 2 % - easy to drive and to protect DS99228E(01/06) 2006 IXYS All rights reservedIXTH 36N50P IXTQ 36N50P IXTT 36N50P IXTV36N50P IXTV 36N50PS Symbol Test Conditions Characteristic Values (T = 25 C unless otherwise specified) J Min. Typ. Max. g V = 20 V I = 0.5 I , pulse test 23 36 S fs DS D D25 C 5500 pF iss C V = 0 V, V = 25 V, f = 1 MHz 510 pF oss GS DS C 40 pF rss t 25 ns d(on) t V = 10 V, V = 0.5 V , I = I 27 ns r GS DS DSS D D25 t R = 3 (External) 75 ns d(off) G t 21 ns f Q 85 nC g(on) Q V = 10 V, V = 0.5 V , I = 0.5 I 30 nC gs GS DS DSS D D25 Q 31 nC gd R 0.23 C/W thJC R (TO-247 and TO-3P) 0.21 C/W thCS (PLUS220) 0.21 C/W Source-Drain Diode Characteristic Values (T = 25 C unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. I V = 0 V 36 A S GS I Repetitive 108 A SM V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = 25 A, -di/dt = 100 A/s 400 ns rr F V = 100 V, V = 0 V R GS Characteristic Curves Fig. 2. Extended Output Characteristics Fig. 1. Output Characteristics 25C 25C 36 80 V = 10V V = 10V GS GS 32 70 8V 8V 7V 28 7V 60 24 50 6.5V 6V 20 40 16 6V 30 12 5.5V 20 8 5.5V 10 4 5V 5V 0 0 0 123 456 7 0 2 4 6 8 10 12141618 202224 V - Volts V - Volts D S D S IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 I - Amperes D I - Amperes D