Advance Technical Information TM TrenchT4 V = 40V IXTT440N04T4HV DSS Power MOSFET I = 440A D25 R 1.25m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-268HV Symbol Test Conditions Maximum Ratings G V T = 25 C to 175 C40V DSS J S V T = 25 C to 175 C, R = 1M 40 V D (Tab) DGR J GS V Transient 15 V GSM G = Gate D = Drain I T = 25 C 440 A S = Source Tab = Drain D25 C I Lead Current Limit, RMS 160 A LRMS I T = 25 C, Pulse Width Limited by T 1200 A DM C JM I T = 25 C 440 A A C E T = 25 C 1.5 J AS C P T = 25 C 940 W D C Features T -55 ... +175 C J T 175 C JM International Standard Package T -55 ... +175 C stg Low R and Q DS(ON) G Avalanche Rated T Maximum Lead Temperature for Soldering 300 C L Low Package Inductance T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Weight 4 g Advantages High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values Applications (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 250 A 40 V Switch-Mode and Resonant-Mode DSS GS D Power Supplies V V = V , I = 250A 2.0 4.0 V GS(th) DS GS D DC-DC Converters PFC Circuits I V = 15V, V = 0V 200 nA GSS GS DS AC and DC Motor Drives I V = V , V = 0V 10 A DSS DS DSS GS Robotics and Servo Controls T = 125C 1 mA J R V = 10V, I = 100A, Note 1 1.25 m DS(on) GS D 2016 IXYS CORPORATION, All Rights Reserved DS100719(4/16)IXTT440N04T4HV Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 60A, Note 1 110 180 S fs DS D R Gate Input Resistance 1.1 Gi C 26 nF iss C V = 0V, V = 25V, f = 1MHz 3570 pF oss GS DS C 235 pF rss t 44 ns d(on) Resistive Switching Times t 250 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 120 ns d(off) R = 2 (External) G t 74 ns f Q 480 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 136 nC gs GS DS DSS D D25 Q 162 nC gd R 0.16 C/W thJC Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 440 A S GS I Repetitive, pulse Width Limited by T 1760 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 72 ns rr I = 150A, -di/dt = 100A/ s F Q 110 nC RM V = 30V R I 3 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537