Advance Technical Information TM TrenchT2 V = 40V IXTH500N04T2 DSS I = 500A Power MOSFET IXTT500N04T2 D25 R 1.6m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Fast Intrinsic Diode G D D (Tab) S Symbol Test Conditions Maximum Ratings V T = 25C to 175C40 V DSS J V T = 25C to 175C, R = 1M 40 V DGR J GS TO-268 (IXTT) V Transient 20 V GSM I T = 25C (Chip Capability) 500 A G D25 C I Lead Current Limit, RMS 160 A S LRMS I T = 25C, Pulse Width Limited by T 1250 A D (Tab) DM C JM I T = 25C 100 A A C E T = 25C 800 mJ G = Gate D = Drain AS C S = Source Tab = Drain P T = 25C 1000 W D C T -55 ... +175 C J T 175 C Features JM T -55 ... +175 C stg z International Standard Packages T 1.6mm (0.062in.) from Case for 10s 300 C z L 175C Operating Temperature T Plastic Body for 10 seconds 260 C z sold High Current Handling Capability z Avalanche Rated M Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in. d z Fast Intrinsic Diode Weight TO-247 6 g z Low R TO-268 4 g DS(on) Advantages z Easy to Mount Symbol Test Conditions Characteristic Values z Space Savings (T = 25C Unless Otherwise Specified) Min. Typ. Max. J z High Power Density BV V = 0V, I = 1mA 40 V DSS GS D V V = V , I = 250A 1.5 3.5 V GS(th) DS GS D Applications I V = 20V, V = 0V 200 nA GSS GS DS Synchronous Buck Converters I V = V , V = 0V 10 A DSS DS DSS GS High Current Switching Power T = 150C 750 A J Supplies R V = 10V, I = 100A, Notes 1 & 2 1.6 m Battery Powered Electric Motors DS(on) GS D Resonant-Mode Power Supplies Electronics Ballast Application Class D Audio Amplifiers 2009 IXYS CORPORATION, All Rights Reserved DS100218(12/09)IXTH500N04T2 IXTT500N04T2 Symbol Test Conditions Characteristic Values TO-247 (IXTH) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 75 125 S fs DS D C 25 nF iss P C V = 0V, V = 25V, f = 1MHz 4410 pF 1 2 3 oss GS DS C 970 pF rss R Gate Input Resistance 1.1 Gi t 37 ns d(on) Resistive Switching Times t 16 ns e r V = 10V, V = 0.5 V , I = 200A GS DS DSS D t 68 ns Terminals: 1 - Gate 2 - Drain d(off) R = 1 (External) 3 - Source Tab - Drain G t 44 ns f Dim. Millimeter Inches Min. Max. Min. Max. Q 405 nC g(on) A 4.7 5.3 .185 .209 Q V = 10V, V = 0.5 V , I = 0.5 I 105 nC A 2.2 2.54 .087 .102 gs GS DS DSS D D25 1 A 2.2 2.6 .059 .098 2 Q 118 nC gd b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 R 0.15 C/W thJC b 2.87 3.12 .113 .123 2 R TO-247 0.21 C/W C .4 .8 .016 .031 thCH D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 Source-Drain Diode L 19.81 20.32 .780 .800 L1 4.50 .177 Symbol Test Conditions Characteristic Values P 3.55 3.65 .140 .144 (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 I V = 0V 500 A S GS S 6.15 BSC 242 BSC I Repetitive, Pulse Width Limited by T 1500 A SM JM TO-268 (IXTT) Outline V I = 100A, V = 0V, Note 1 1.2 V F GS SD t 84 ns rr I = 100A, V = 0V F GS I 3.1 A -di/dt = 100A/s RM V = 20V Q R 130 nC RM Notes: 1. Pulse test, t 300s, duty cycle, d 2%. 2. Includes lead resistance. Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537