V = 250 V TM DSS IXTQ 64N25P PolarHT I = 64 A D25 IXTT 64N25P Power MOSFET R 49 m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 250 V DSS J V T = 25 C to 150 C R = 1 M 250 V DGR J GS V Continuous 20 V GSS V Transient 30 V GSM G I T = 25C64A D (TAB) D25 C S I T = 25 C, pulse width limited by T 160 A DM C JM I T = 25C60A AR C E T = 25C40mJ TO-268 (IXTT) AR C E T = 25 C 1.0 J AS C dv/dt I I , di/dt 100 A/s, V V , 10 V/ns S DM DD DSS G T 150C, R = 4 J G S D (TAB) P T = 25 C 400 W D C G = Gate D = Drain T -55 ... +150 C S = Source TAB = Drain J T 150 C JM T -55 ... +150 C stg Features T 1.6 mm (0.062 in.) from case for 10 s 300 C L l International standard packages T Plastic body for 10 s 260 C SOLD l Unclamped Inductive Switching (UIS) M Mounting torque (TO-3P) 1.13/10 Nm/lb.in. rated d l Low package inductance Weight TO-3P 5.5 g - easy to drive and to protect TO-268 5.0 g Advantages Symbol Test Conditions Characteristic Values l Easy to mount (T = 25 C, unless otherwise specified) Min. Typ. Max. J l Space savings BV V = 0 V, I = 250 A 250 V l DSS GS D High power density V V = V , I = 250A 2.5 5.0 V GS(th) DS GS D I V = 20 V , V = 0 100 nA GSS GS DC DS I V = V 25 A DSS DS DSS V = 0 V T = 125 C 250 A GS J R V = 10 V, I = 0.5 I 49 m DS(on) GS D D25 Pulse test, t 300 s, duty cycle d 2 % DS99120E(12/05) 2006 IXYS All rights reserved IXTQ 64N25P IXTT 64N25P Symbol Test Conditions Characteristic Values TO-3P (IXTQ) Outline (T = 25 C, unless otherwise specified) J Min. Typ. Max. g V = 10 V I = 0.5 I , pulse test 20 30 S fs DS D D25 C 3450 pF iss C V = 0 V, V = 25 V, f = 1 MHz 640 pF oss GS DS C 155 pF rss t 21 ns d(on) t V = 10 V, V = 0.5 V , I = I 23 ns r GS DS DSS D D25 t R = 4 (External) 60 ns d(off) G t 20 ns f Q 105 nC g(on) Q V = 10 V, V = 0.5 V , I = 0.5 I 24 nC gs GS DS DSS D D25 Q 53 nC gd R 0.31 C/W thJC R (TO-3P) 0.21 C/W thCS Source-Drain Diode Characteristic Values (T = 25 C, unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. I V = 0 V 64 A S GS TO-268 (IXTT) Outline I Repetitive 160 A SM V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = 25 A, -di/dt = 100 A/s 200 ns rr F Q V = 100 V, V = 0 V 3.0 C RM R GS IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2