TM IXTQ 74N20P V = 200 V DSS PolarHT IXTT 74N20P I =74 A D25 Power MOSFET R 34 m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings V T = 25 C to 175 C 200 V DSS J V T = 25 C to 175 C R = 1 M 200 V DGR J GS V Continuous 20 V GSS V Transient 30 V GSM G I T = 25C74A D (TAB) D25 C S I T = 25 C, pulse width limited by T 200 A DM C JM I T = 25C60A AR C E T = 25C40mJ TO-268 (IXTT) AR C E T = 25 C 1.0 J AS C dv/dt I I , di/dt 100 A/s, V V , 10 V/ns S DM DD DSS G T 150C, R = 4 J G S D (TAB) P T = 25 C 480 W D C G = Gate D = Drain T -55 ... +175 C S = Source TAB = Drain J T 175 C JM T -55 ... +150 C stg T 1.6 mm (0.062 in.) from case for 10 s 300 C L T Plastic body for 10 s 260 C SOLD Features M Mounting torque (TO-3P) 1.13/10 Nm/lb.in. d l Weight TO-3P 5.5 g International standard packages TO-268 5.0 g l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Symbol Test Conditions Characteristic Values (T = 25 C, unless otherwise specified) Min. Typ. Max. J BV V = 0 V, I = 250 A 200 V Advantages DSS GS D V V = V , I = 250A 2.5 5.0 V l GS(th) DS GS D Easy to mount l Space savings I V = 20 V , V = 0 100 nA GSS GS DC DS l High power density I V = V 25 A DSS DS DSS V = 0 V T = 125 C 250 A GS J R V = 10 V, I = 0.5 I 34 m DS(on) GS D D25 Pulse test, t 300 s, duty cycle d 2 % DS99119E(12/05) 2006 IXYS All rights reservedIXTQ 74N20P IXTT 74N20P Symbol Test Conditions Characteristic Values TO-3P (IXTQ) Outline (T = 25 C, unless otherwise specified) J Min. Typ. Max. g V = 10 V I = 0.5 I , pulse test 30 44 S fs DS D D25 C 3300 pF iss C V = 0 V, V = 25 V, f = 1 MHz 800 pF oss GS DS C 190 pF rss t 23 ns d(on) t V = 10 V, V = 0.5 V , I = I 21 ns r GS DS DSS D D25 t R = 4 (External) 60 ns d(off) G t 21 ns f Q 107 nC g(on) Q V = 10 V, V = 0.5 V , I = 0.5 I 24 nC gs GS DS DSS D D25 Q 52 nC gd R 0.31 C/W thJC R (TO-3P) 0.21 C/W thCS Source-Drain Diode Characteristic Values (T = 25 C, unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. I V = 0 V 74 A S GS I Repetitive 180 A SM TO-268 Outline V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = 25 A, -di/dt = 100 A/s 160 ns rr F Q V = 100 V, V = 0 V 3.0 C RM R GS IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2