V = 1000V High Voltage IXTU01N100 DSS I = 100mA IXTY01N100 Power MOSFET D25 R 80 DS(on) N-Channel Enhancement Mode TO-251 (IXTU) G D Symbol Test Conditions Maximum Ratings S D (Tab) V T = 25 C to 150 C 1000 V DSS J TO-252 V T = 25 C to 150 C, R = 1M 1000 V DGR J GS (IXTY) V Continuous 20 V GSS G V Transient 30 V GSM S I T = 25 C 100 mA D25 C I T = 25 C, Pulse Width Limited by T 400 mA D (Tab) DM C JM P T = 25 C25W D C G = Gate D = Drain S = Source Tab = Drain T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD F Mounting force 1.13 / 10 Nm/lb.in. C Features Weight TO-251 0.40 g TO-252 0.35 g International Standard Packages Fast Switching Times Avalanche Rated TM R HDMOS Process ds(on) Rugged Polysilicon Gate Cell structure Advantages Symbol Test Conditions Characteristic Values High Power Density (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. Space Savings J BV V = 0V, I = 25A 1000 V DSS GS D Applications V V = V , I = 25A 2.0 4.5 V GS(th) DS GS D Level Shifting I V = 20V, V = 0V 50 nA GSS GS DS Triggers I V = 0.8 V , V = 0V 10 A Solid State Relays DSS DS DSS GS T = 125C 200A Current Regulators J R V = 10V, I = 50mA, Note 1 60 80 DS(on) GS D 2017 IXYS CORPORATION, All Rights Reserved DS98812E(9/17)IXTU01N100 IXTY01N100 Symbol Test Conditions Characteristic Values TO-251 Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 50mA, Note 1 0.16 S fs DS D C 54.0 pF iss C V = 0V, V = 25V, f = 1MHz 6.9 pF oss GS DS C 2.0 pF rss t 12 ns d(on) Resistive Switching Times t 12 ns r V = 10V, V = 0.5 V , I = 50mA GS DS DSS D t 40 ns d(off) R = 50 (External) G t 28 ns f Q 6.9 nC g(on) 1. Gate 2.Drain 3. Source 4. Drain Q V = 10V, V = 0.5 V , I = 50mA 1.8 nC gs GS DS DSS D Dim. Millimeter Inches Q 3.0 nC gd Min. Max. Min. Max. A 2.19 2.38 .086 .094 R 5C/W thJC A1 0.89 1.14 0.35 .045 b 0.64 0.89 .025 .035 b1 0.76 1.14 .030 .045 b2 5.21 5.46 .205 .215 c 0.46 0.58 .018 .023 c1 0.46 0.58 .018 .023 Source-Drain Diode D 5.97 6.22 .235 .245 E 6.35 6.73 .250 .265 Symbol Test Conditions Characteristic Values e 2.28 BSC .090 BSC e1 4.57 BSC .180 BSC (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J H 17.02 17.78 .670 .700 L 8.89 9.65 .350 .380 I V = 0V 100 mA S GS L1 1.91 2.28 .075 .090 L2 0.89 1.27 .035 .050 I Repetitive, Pulse Width Limited by T 300 mA SM JM V I = I , V = 0V, Note 1 1.8 V SD F S GS TO-252 AA Outline t 1.5 I = 0.75A, -di/dt = 100A/ s, s rr F AA E b3 L3 c2 V = 25V R 4 A1 H L4 1 2 3 A2 L1 L 1 - Gate b2 c e L2 e1 e1 e1 e1 e1 e1 2,4 - Drain 0 3 - Source 5.55MIN OPTIONAL 6.50MIN 4 Note 1: Pulse test, t 300 s, duty cycle, d 2%. 6.40 2.85MIN BOTTOM 2.28 1.25MIN VIEW LAND PATTERN RECOMMENDATION IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537