V = 1000V High Voltage IXTU05N100 DSS I = 750mA IXTY05N100 Power MOSFET D25 R 17 DS(on) N-Channel Enhancement Mode Avalanche Rated TO-251 (IXTU) G D Symbol Test Conditions Maximum Ratings S D (TAB) V T = 25 C to 150 C 1000 V DSS J TO-252 V T = 25 C to 150 C, R = 1M 1000 V DGR J GS (IXTY) V Continuous 30 V GSS G V Transient 40 V GSM S I T = 25 C 750 mA D25 C I T = 25 C, Pulse Width Limited by T 3A D (TAB) DM C JM I T = 25 C1A A C G = Gate D = Drain S = Source TAB = Drain E T = 25 C 100 mJ AS C dv/dt I I , V V , T 150 C 3 V/ns S DM DD DSS J P T = 25 C40W D C T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg Features T Maximum Lead Temperature for Soldering 300 C L International Standard Packages T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Fast Switching Times F Mounting force 1.13 / 10 Nm/lb.in. C Avalanche Rated TM Weight TO-251 0.40 g R HDMOS Process ds(on) TO-252 0.35 g Rugged Polysilicon Gate Cell structure Extended FBSOA Advantages Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. High Power Density J Space Savings BV V = 0V, I = 250A 1000 V DSS GS D V V = V , I = 250A 2.5 4.5 V Applications GS(th) DS GS D I V = 30V, V = 0V 100 nA GSS GS DS Switch-Mode and Resonant-Mode I V = V , V = 0V 25 A Power Supplies DSS DS DSS GS T = 125C 500A Flyback Inverters J DC Choppers R V = 10V, I = 375mA, Note 1 17 DS(on) GS D 2017 IXYS CORPORATION, All Rights Reserved DS100102B(9/17)IXTU05N100 IXTY05N100 Symbol Test Conditions Characteristic Values TO-251Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 500mA, Note 1 0.55 0.93 S fs DS D C 260 pF iss C V = 0V, V = 25V, f = 1MHz 22 pF oss GS DS C 8 pF rss t 11 ns d(on) Resistive Switching Times t 19 ns r = 10V, V = 0.5 V , I = 1A V GS DS DSS D t 40 ns d(off) R = 47 (External) G t 28 ns f 1. Gate 2.Drain Q 7.8 nC g(on) 3. Source 4. Drain Q V = 10V, V = 0.5 V , I = 1A 1.4 nC gs GS DS DSS D Dim. Millimeter Inches Min. Max. Min. Max. Q 4.1 nC gd A 2.19 2.38 .086 .094 A1 0.89 1.14 0.35 .045 R 3.1C/W thJC b 0.64 0.89 .025 .035 b1 0.76 1.14 .030 .045 b2 5.21 5.46 .205 .215 c 0.46 0.58 .018 .023 c1 0.46 0.58 .018 .023 D 5.97 6.22 .235 .245 E 6.35 6.73 .250 .265 Source-Drain Diode e 2.28 BSC .090 BSC e1 4.57 BSC .180 BSC Symbol Test Conditions Characteristic Values H 17.02 17.78 .670 .700 L 8.89 9.65 .350 .380 (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J L1 1.91 2.28 .075 .090 L2 0.89 1.27 .035 .050 I V = 0V 750 mA S GS I Repetitive, Pulse Width Limited by T 3 A SM JM TO-252 AA Outline V I = I , V = 0V, Note 1 1.5 V AA E SD F S GS b3 L3 c2 4 t I = I , -di/dt = 100A/ s 710 ns rr F S V = 100V, V = 0V A1 R GS H L4 1 2 3 A2 L1 L 1 - Gate b2 c e L2 e1 e1 e1 e1 e1 e1 2,4 - Drain 0 3 - Source 5.55MIN OPTIONAL 6.50MIN 4 Note 1: Pulse test, t 300 s, duty cycle, d 2%. 6.40 2.85MIN BOTTOM 2.28 1.25MIN VIEW LAND PATTERN RECOMMENDATION IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537