Advance Technical Information TM LinearL2 Power V = 200V IXTK110N20L2 DSS MOSFET w/Extended I = 110A IXTX110N20L2 D25 FBSOA R < 24m DS(on) N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 200 V DSS J V T = 25C to 150C, R = 1M 200 V G DGR J GS D (TAB) S V Continuous 20 V GSS V Transient 30 V GSM I T = 25C 110 A D25 C PLUS247(IXTX) I T = 25C, Pulse Width Limited by T 275 A DM C JM I T = 25C55 A A C E T = 25C5 J AS C P T = 25C 960 W D C G T -55...+150 C D J (TAB) S T 150 C JM T -55...+150 C stg G = Gate D = Drain S = Source TAB = Drain T 1.6mm (0.063 in.) from Case for 10s 300 C L T Plastic Body for 10s 260 C SOLD M Mounting Torque (IXTK) 1.13/10 Nm/lb.in. Features d F Mounting Force (IXTX) 20..120 / 4.5..27 N/lb. C z Designed for Linear Operation Weight TO-264 10 g z International Standard Packages PLUS247 6 g z Avalanche Rated z Guaranteed FBSOA at 75C Advantages z Easy to Mount z Space Savings z High Power Density Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 1mA 200 V DSS GS D z Solid State Circuit Breakers V V = V , I = 3mA 2.0 4.5 V GS(th) DS GS D z Soft Start Controls z I V = 20V, V = 0V 200 nA Linear Amplifiers GSS GS DS z Programmable Loads I V = V , V = 0V 50 A DSS DS DSS GS z Current Regulators T = 125C 2.5 mA J R V = 10V, I = 0.5 I , Note 1 24 m DS(on) GS D D25 2009 IXYS CORPORATION, All Rights Reserved DS100195(9/09) IXTK110N20L2 IXTX110N20L2 Symbol Test Conditions Characteristic Values TO-264 (IXTK) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 55 75 95 S fs DS D D25 C 23 nF iss C V = 0V, V = 25V, f = 1MHz 2160 pF oss GS DS C 320 pF rss t 40 ns d(on) Resistive Switching Times t 100 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 33 ns d(off) R = 1 (External) G t 135 ns f Q 500 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 110 nC gs GS DS DSS D D25 Q 182 nC gd R 0.13 C/W thJC R 0.15 C/W thCS Safe-Operating-Area Specification Symbol Test Conditions Characteristic Values Min. Typ. Max. SOA V = 200V, I = 2.88A, T = 75C, Tp = 5s 575 W DS D C TM PLUS 247 (IXTX) Outline Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 110 A S GS I Repetitive, Pulse Width Limited by T 440 A SM JM V I = 55A, V = 0V, Note 1 1.35 V SD F GS t 420 ns rr I = 55A, -di/dt = 100A/s, F I 39 A RM V = 100V, V = 0V R GS Q 8.3 C Terminals: 1 - Gate RM 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. Millimeter Inches Min. Max. Min. Max. Note 1. Pulse test, t 300s duty cycle, d 2%. A 4.83 5.21 .190 .205 A 2.29 2.54 .090 .100 1 A 1.91 2.16 .075 .085 2 b 1.14 1.40 .045 .055 b 1.91 2.13 .075 .084 1 ADVANCE TECHNICAL INFORMATION b 2.92 3.12 .115 .123 2 The product presented herein is under development. The Technical Specifications offered are derived C 0.61 0.80 .024 .031 from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a D 20.80 21.34 .819 .840considered reflectio of the anticipated result. IXYS reserves the right to change limits, test E 15.75 16.13 .620 .635 conditions, and dimensions without notice. e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537