TM PolarP V = -100V IXTK170P10P DSS I = -170A Power MOSFET IXTX170P10P D25 R 14m DS(on) P-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings G V T = 25C to 150 C -100 V D DSS J S V T = 25 C to 150 C, R = 1M -100 V DGR J GS Tab V Continuous 20 V GSS V Transient 30 V GSM PLUS247 (IXTX) I T = 25 C (Chip Capability) -170 A D25 C I Lead Current Limit, RMS -160 A LRMS I T = 25 C, Pulse Width Limited by T - 510 A DM C JM I T = 25 C -170 A A C G D Tab S E T = 25 C 3.5 J AS C dv/dt I I , V V , T 150 C 10 V/ns S DM DD DSS J G = Gate D = Drain S = Source Tab = Drain P T = 25 C 890 W D C T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C Features L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD International Standard Packages M Mounting Force (PLUS247) 20..120 / 4.5..27 N/lb. d TM Rugged PolarP Process Mounting Forque (TO-264) 1.13 / 10 Nm/lb.in. High Current Handling Capability Weight PLUS247 6 g Fast Intrinsic Diode TO-264 10 g Avalanche Rated Low Package Inductance Advantages Symbol Test Conditions Characteristic Values Easy to Mount (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Space Savings High Power Density BV V = 0V, I = - 250A -100 V DSS GS D V V = V , I = -1mA - 2.0 - 4.0 V GS(th) DS GS D Applications I V = 20V, V = 0V 100 nA GSS GS DS High-Side Switches I V = V , V = 0V - 50 A Push Pull Amplifiers DSS DS DSS GS T = 125C - 250A DC Choppers J Automatic Test Equipment R V = -10V, I = 0.5 I , Note 1 14 m DS(on) GS D D25 Current Regulators 2017 IXYS CORPORATION, All Rights Reserved DS99974C(5/17) IXTK170P10P IXTX170P10P Symbol Test Conditions Characteristic Values TO-264 AA Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = 0.5 I , Note 1 35 58 S fs DS D D25 C 12.6 nF iss C V = 0V, V = - 25V, f = 1MHz 4190 pF oss GS DS C 930 pF rss t 32 ns d(on) Resistive Switching Times Terminals: 1 - Gate t 75 ns r V = -10V, V = 0.5 V , I = 0.5 I 2 - Drain GS DS DSS D D25 3 - Source t 82 ns d(off) 4 - Drain R = 1 (External) G Dim. Millimeter Inches t 45 ns f Min. Max. Min. Max. A 4.82 5.13 .190 .202 Q 240 nC g(on) A1 2.54 2.89 .100 .114 A2 2.00 2.10 .079 .083 Q V = -10V, V = 0.5 V , I = 0.5 I 45 nC gs GS DS DSS D D25 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 Q 120 nC gd b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 R 0.14 C/W thJC D 25.91 26.16 1.020 1.030 E 19.81 19.96 .780 .786 R 0.15 C/W thCS e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 Source-Drain Diode P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Symbol Test Conditions Characteristic Values Q1 8.38 8.69 .330 .342 R 3.81 4.32 .150 .170 (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 I V = 0V -170 A S GS T 1.57 1.83 .062 .072 I Repetitive, Pulse Width Limited by T - 680 A SM JM TM PLUS 247 Outline V I = - 85A, V = 0V, Note 1 - 3.3 V SD F GS t 176 ns rr I = - 85A, -di/dt = -100A/ s F Q 1.25 C RM V = - 50V, V = 0V R GS I -14.2 A RM Note 1: Pulse test, t 300 s, duty cycle, d 2%. Terminals: 1 - Gate 2 - Drain 3 - Source Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 A 2.29 2.54 .090 .100 1 A 1.91 2.16 .075 .085 2 b 1.14 1.40 .045 .055 b 1.91 2.13 .075 .084 1 b 2.92 3.12 .115 .123 2 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537