Advance Technical Information High Voltage V = 4500V IXTX1R4N450HV DSS Power MOSFET I = 1.4A D25 R 40 DS(on) N-Channel Enhancement Mode TO-247PLUS-HV Symbol Test Conditions Maximum Ratings G S V T = 25 C to 150 C 4500 V DSS J D (Tab) D V T = 25 C to 150 C, R = 1M 4500 V DGR J GS V Continuous 20 V GSS G = Gate D = Drain V Transient 30 V GSM S = Source Tab = Drain I T = 25 C 1.4 A D25 C I T = 25 C, Pulse Width Limited by T 5.0 A DM C JM P T = 25 C 960 W D C T - 55 ... +150 C J Features T 150 C JM T - 55 ... +150 C stg High Blocking Voltage T Maximum Lead Temperature for Soldering 300 C L High Voltage Package T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD M Mounting Force 20..120 / 4.5..27 Nm/lb.in d Advantages Weight 6 g Easy to Mount Space Savings High Power Density Applications High Voltage Power Supplies Symbol Test Conditions Characteristic Values Capacitor Discharge Applications (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Pulse Circuits Laser and X-Ray Generation Systems V V = V , I = 250A 4.0 6.0 V GS(th) DS GS D I V = 20V, V = 0V 100 nA GSS GS DS I V = 3.6kV, V = 0V 5 A DSS DS GS V = 4.5kV 25 A DS V = 3.6kV T = 125C 50 A DS J R V = 10V, I = 50mA, Note 1 40 DS(on) GS D 2016 IXYS CORPORATION, All Rights Reserved DS100711(03/16)IXTX1R4N450HV Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 50V, I = 0.7A, Note 1 1.2 2.0 S fs DS D C 3300 pF iss C V = 0V, V = 25V, f = 1MHz 134 pF oss GS DS C 52 pF rss R Gate Input Resistance 7.8 Gi t 44 ns d(on) Resistive Switching Times t 60 ns r V = 10V, V = 500V, I = 0.7A GS DS D t 126 ns d(off) R = 10 (External) G t 170 ns f Q 88 nC g(on) Q V = 10V, V = 0.5 V , I = 0.7A 16 nC gs GS DS DSS D Q 42 nC gd R 0.13 C/W thJC R 0.15 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V, Note1 1.4 A S GS I Repetitive, pulse Width Limited by T 5.6 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 660 ns rr I = 1A, -di/dt = 100A/ s F Q 4.6 C RM V = 100V R I 14.0 A RM Note: 1. Pulse test, t 300 s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537