High Voltage Power V = 1500V IXTK20N150 DSS MOSFETs w/ Extended I = 20A IXTX20N150 D25 FBSOA R < 1 DS(on) N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA TO-264 (IXTK) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1500 V DSS J G D V T = 25C to 150C, R = 1M 1500 V DGR J GS S V Continuous 30 V Tab GSS V Transient 40 V GSM I T = 25C20 A PLUS247 (IXTX) D25 C I T = 25C, Pulse Width Limited by T 50 A DM C JM I T = 25C10 A A C E T = 25C 2.5 J AS C G dv/dt I I , V V ,T 150C 5 V/ns S DM DD DSS J D Tab S P T = 25C 1250 W D C T -55 to +150 C G = Gate D = Drain J S = Source Tab = Drain T 150 C JM T -55 to +150 C stg T 1.6mm (0.062 in.) from Case for 10s 300 C L T Plastic Body for 10s 260 C SOLD Features M Mounting Torque (TO-264) 1.13/10 Nm/lb.in. d F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb. C z Avalanche Rated Weight TO-264 10 g z Fast Intrinsic Diode PLUS247 6 g z Guaranteed FBSOA at 75C z Low Package Inductance Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J Advantages BV V = 0V, I = 1mA 1500 V DSS GS D z Easy to Mount V V = V , I = 1mA 2.5 4.5 V z Space Savings GS(th) DS GS D I V = 30V, V = 0V 200 nA GSS GS DS I V = V , V = 0V 50 A Applications DSS DS DSS GS T = 125C 750 A J z High Voltage Power Supplies R V = 10V, I = 0.5 I , Note 1 1 z DS(on) GS D D25 Capacitor Discharge z Pulse Circuits 2012 IXYS CORPORATION, All Rights Reserved DS100424B(11/12) IXTK20N150 IXTX20N150 Symbol Test Conditions Characteristic Values TO-264 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 30V, I = 0.5 I , Note 1 14 24 S fs DS D D25 C 7800 pF iss C V = 0V, V = 25V, f = 1MHz 487 pF oss GS DS C 163 pF rss t 35 ns d(on) Resistive Switching Times t 30 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 80 ns Terminals: 1 - Gate d(off) 2 - Drain R = 1 (External) G 3 - Source t 33 ns f 4 - Drain Millimeter Inches Q 215 nC Dim. g(on) Min. Max. Min. Max. Q V = 10V, V = 0.5 V , I = 0.5 I 40 nC A 4.82 5.13 .190 .202 gs GS DS DSS D D25 A1 2.54 2.89 .100 .114 Q 93 nC A2 2.00 2.10 .079 .083 gd b 1.12 1.42 .044 .056 R 0.10 C/W b1 2.39 2.69 .094 .106 thJC b2 2.90 3.09 .114 .122 R 0.15 C/W c 0.53 0.83 .021 .033 thCS D 25.91 26.16 1.020 1.030 E 19.81 19.96 .780 .786 e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 Safe Operating Area Specification L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Symbol Test Conditions Characteristic Values Q 6.07 6.27 .239 .247 Min. Typ. Max. Q1 8.38 8.69 .330 .342 R 3.81 4.32 .150 .170 SOA V = 1500V, I = 133mA, T = 75C, tp = 3s 200 W R1 1.78 2.29 .070 .090 DS D C S 6.04 6.30 .238 .248 T 1.57 1.83 .062 .072 TM PLUS247 Outline Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 20 A S GS I Repetitive, Pulse Width Limited by T 80 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 1.1 s rr I = 10A, -di/dt = 100A/s F Q 1.8 C RM Terminals: 1 - Gate V = 100V, V = 0V R GS I 32 A 2 - Drain RM 3 - Source Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 2.29 2.54 .090 .100 A 1 A 1.91 2.16 .075 .085 2 Note: 1. Pulse test, t 300s, duty cycle, d 2%. b 1.14 1.40 .045 .055 b 1.91 2.13 .075 .084 1 b 2.92 3.12 .115 .123 2 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537