Advance Technical Information TM LinearL2 Power V = 75V IXTK240N075L2 DSS MOSFET w/Extended I = 240A IXTX240N075L2 D25 FBSOA R < 7m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C75 V DSS J V T = 25 C to 150 C, R = 1M 75 V DGR J GS G V Continuous 20 V GSS D D (Tab) V Transient 30 V GSM S I T = 25 C (Chip Capability) 240 A D25 C PLUS247 (IXTX) I External Lead Current Limit 160 A L(RMS) I T = 25 C, pulse width limited by T 720 A DM C JM I T = 25 C 240 A A C E T = 25 C3 J AS C G P T = 25 C 960 W D C D D (Tab) S T -55...+150 C J T 150 C JM G = Gate D = Drain T -55...+150 C stg S = Source Tab = Drain T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD M Mounting Torque (TO-264) 1.13/10 Nm/lb.in d Features F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb C Designed for linear operation Weight TO-264 10 g PLUS247 6 g International standard packages Avalanche rated Guaranteed FBSOA at 75 C Advantages Easy to mount Space savings High power density Symbol Test Conditions Characteristic Values (T = 25 C, unless otherwise specified) Min. Typ. Max. J Applications BV V = 0V, I = 1mA 75 V DSS GS D Solid state circuit breakers V V = V , I = 3mA 2.0 4.5 V GS(th) DS GS D Soft start controls I V = 20V, V = 0V 200 nA GSS GS DS Linear amplifiers Programmable loads I V = V , V = 0V 10A DSS DS DSS GS Current regulators T = 125C 50 A J R V = 10V, I = 0.5 I , Note 1 7 m DS(on) GS D D25 2016 IXYS CORPORATION, All rights reserved DS100769(12/16) IXTK240N075L2 IXTX240N075L2 Symbol Test Conditions Characteristic Values TO-264 Outline (T = 25 C, unless otherwise specified) Min. Typ. Max. E A J Q S g V = 10V, I = 60A, Note 1 60 86 110 S fs DS D R Q1 D C 19 nF iss R1 C V = 0V, V = 25V, f = 1MHz 4420 pF 1 2 3 L1 oss GS DS C 1470 pF rss L t 34 ns d(on) Resistive Switching Times c b A1 b1 t 200 ns b2 r V = 10V, V = 0.5 V , I = 0.5 I e x2 GS DS DSS D D25 t 136 ns d(off) R = 1 (External) G t 47 ns 0P 4 f Terminals: 1 = Gate BACK SIDE 2,4 = Drain 3 = Source Q 546 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 86 nC gs GS DS DSS D D25 Q 225 nC gd R 0.13 C/W thJC R 0.15 C/W thCS Safe Operating Area Specification Symbol Test Conditions Characteristic Values Min. Typ. Max. SOA V = 75V, I = 7.7A, T = 75 C, Tp = 5s 575 W DS D C TM PLUS 247 Outline A E E1 A2 Q Source-Drain Diode D2 R D1 Symbol Test Conditions Characteristic Values D (T = 25 C, unless otherwise specified) Min. Typ. Max. 4 J 1 2 3 L1 I V = 0V 240 A S GS L I Repetitive, pulse width limited by T 960 A SM JM V I = 100A, V = 0V, Note 1 1.5 V SD F GS b A1 e 3 PLCS C b2 2 PLCS 2 PLCS t 206 ns b4 rr I = 120A, -di/dt = 100A/ s, F I 18.8 A Terminals: 1 - Gate RM V = 37.5V, V = 0V 2,4 - Drain R GS Q 1.9 C RM 3 - Source Note: 1. Pulse test, t 300 s duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537