X-On Electronics has gained recognition as a prominent supplier of IXTX24N100 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXTX24N100 MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXTX24N100 IXYS

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Part No.	IXTX24N100
Manufacturer:	IXYS
Category:	MOSFETs
Description:	MOSFET 24 Amps 1000V 200V N-channel MOSFET for high-current applications.
Datasheet:	IXTX24N100 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

300: USD 21.34 ea
Line Total: USD 6402

Availability - 0

MOQ: 300 Multiples: 300
Pack Size: 300

IXTX24N100 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Wed. 04 Dec to Fri. 06 Dec MOQ : 300 Multiples : 300	300 : USD 21.34

0 Ship by Wed. 04 Dec to Fri. 06 Dec MOQ : 1 Multiples : 1	1 : USD 30.3543 2 : USD 28.6989

We are delighted to provide the IXTX24N100 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXTX24N100 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

? The IXTX24N100 is a high-voltage insulated gate bipolar transistor (IGBT) engineered by IXYS Corporation. This device is designed to be used in inverter applications, particularly as a medium voltage low-loss switch. It is capable of handling currents up to 24A and can withstand voltages of up to 1200V. The IXTX24N100 is built on the popular Trench IGBT Technology, aimed at providing high performance and low conduction losses. Additional features of this transistor include ultra-low gate charge, short-circuit protection, and high-speed switching capabilities.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

CLR may also be referenced as

IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS

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Manufacturer IXYS IXYS
Product Category MOSFETs MOSFETs
RoHS - XON y y
Id - Continuous Drain Current 24 A 24 A
Vds - Drain-Source Breakdown Voltage 1 kV 1 kV
Rds On - Drain-Source Resistance 400 mOhms 400 mOhms
Transistor Polarity n - channel n - channel
Vgs th - Gate-Source Threshold Voltage 5.5 V 5.5 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 568 W 568 W
Mounting Style through hole through hole
Package / Case PLUS - 247 - 3 PLUS - 247 - 3
Packaging Tube Tube
Technology si si
Number of Channels 1 channel 1 channel
Vgs - Gate-Source Voltage 20 V 20 V
Qg - Gate Charge 267 nC 267 nC
Channel Mode enhancement enhancement
Configuration single single
Height 21.34 mm 21.34 mm
Length 16.13 mm 16.13 mm
Series ixtx24n100 ixtx24n100
Transistor Type 1 n - channel 1 n - channel
Type power mosfet power mosfet
Width 5.21 mm 5.21 mm
Brand Ixys Ixys
Forward Transconductance - Min 15 s 15 s
Fall Time 21 ns 21 ns
Product Type mosfet mosfet
Rise Time 35 ns 35 ns
Factory Pack Quantity : 30 30
Subcategory Mosfets Mosfets
Typical Turn-Off Delay Time 75 ns 75 ns
Typical Turn-On Delay Time 35 ns 35 ns