Advance Technical Information High Voltage V = 3000V IXTX4N300P3HV DSS Power MOSFET I = 4A D25 R 12.5 DS(on) N-Channel Enhancement Mode TO-247PLUS-HV Symbol Test Conditions Maximum Ratings G S V T = 25 C to 150 C 3000 V DSS J D (Tab) D V T = 25 C to 150 C, R = 1M 3000 V DGR J GS V Continuous 20 V GSS G = Gate D = Drain V Transient 30 V GSM S = Source Tab = Drain I T = 25 C4A D25 C I T = 25 C, Pulse Width Limited by T 12 A DM C JM P T = 25 C 960 W D C T - 55 ... +150 C J Features T 150 C JM T - 55 ... +150 C stg High Blocking Voltage T Maximum Lead Temperature for Soldering 300 C L High Voltage Package T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD M Mounting Force 20..120 / 4.5..27 Nm/lb.in d Advantages Weight 6 g Easy to Mount Space Savings High Power Density Applications High Voltage Power Supplies Capacitor Discharge Applications Symbol Test Conditions Characteristic Values Pulse Circuits (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Laser and X-Ray Generation Systems BV V = 0V, I = 250 A 3000 V DSS GS D V V = V , I = 250A 3.0 5.0 V GS(th) DS GS D I V = 20V, V = 0V 100 nA GSS GS DS I V = 0.8 V , V = 0V 25 A DSS DS DSS GS T = 125C 2 mA J R V = 10V, I = 2A, Note 1 12.5 DS(on) GS D 2016 IXYS CORPORATION, All Rights Reserved DS100708(02/16)IXTX4N300P3HV Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 50V, I = 2A, Note 1 3.6 6.0 S fs DS D C 3680 pF iss C V = 0V, V = 25V, f = 1MHz 177 pF oss GS DS C 78 pF rss R Gate Input Resistance 5.0 Gi t 28 ns d(on) Resistive Switching Times t 21 ns r V = 10V, V = 500V, I = 0.5 I GS DS D D25 t 82 ns d(off) R = 2 (External) G t 50 ns f Q 139 nC g(on) Q V = 10V, V = 1.5kV, I = 0.5 I 21 nC gs GS DS D D25 Q 60 nC gd R 0.13 C/W thJC R 0.15 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V, Note1 4 A S GS I Repetitive, pulse Width Limited by T 16 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 420 ns rr I = 2A, -di/dt = 100A/ s F Q 440 nC RM V = 100V R I 2.1 A RM Note: 1. Pulse test, t 300 s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537