Advance Technical Information High Voltage Power V = 2500V IXTK5N250 DSS MOSFET w/ Extended I = 5A IXTX5N250 D25 FBSOA R < 8.8 DS(on) N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA TO-264 (IXTK) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 2500 V DSS J G D V T = 25C to 150C, R = 1M 2500 V DGR J GS S V Continuous 30 V Tab GSS V Transient 40 V GSM I T = 25C 5 A PLUS247 (IXTX) D25 C I T = 25C, Pulse Width Limited by T 20 A DM C JM I T = 25C 2.5 A A C E T = 25C 2.5 J AS C G P T = 25C 960 W D C D Tab S T -55 to +150 C J T 150 C G = Gate D = Drain JM S = Source Tab = Drain T -55 to +150 C stg T 1.6mm (0.062 in.) from Case for 10s 300 C L T Plastic Body for 10s 260 C SOLD M Mounting Torque (TO-264) 1.13/10 Nm/lb.in. d Features F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb. C Weight TO-264 10 g z Avalanche Rated PLUS247 6 g z Fast Intrinsic Diode z Guaranteed FBSOA at 75C z Low Package Inductance Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J Advantages BV V = 0V, I = 1mA 2500 V DSS GS D z Easy to Mount V V = V , I = 1mA 2.0 5.0 V GS(th) DS GS D z Space Savings I V = 30V, V = 0V 200 nA GSS GS DS I V = 2kV, V = 0V 50 A DSS DS GS Applications T = 125C 4 mA J z R V = 10V, I = 0.5 I , Note 1 8.8 High Voltage Power Supplies DS(on) GS D D25 z Capacitor Discharge z Pulse Circuits 2010 IXYS CORPORATION, All Rights Reserved DS100280(08/10) IXTK5N250 IXTX5N250 Symbol Test Conditions Characteristic Values TO-264 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 50V, I = 0.5 I , Note 1 3.0 4.5 6.0 S fs DS D D25 C 8560 pF iss C V = 0V, V = 25V, f = 1MHz 315 pF oss GS DS C 90 pF rss t 33 ns d(on) Resistive Switching Times t 20 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 90 ns Terminals: 1 - Gate d(off) 2 - Drain R = 1 (External) G 3 - Source t 44 ns f 4 - Drain Millimeter Inches Q 200 nC Dim. g(on) Min. Max. Min. Max. Q V = 10V, V = 1000V, I = 0.5 I 28 nC A 4.82 5.13 .190 .202 gs GS DS D D25 A1 2.54 2.89 .100 .114 Q 70 nC A2 2.00 2.10 .079 .083 gd b 1.12 1.42 .044 .056 R 0.13 C/W b1 2.39 2.69 .094 .106 thJC b2 2.90 3.09 .114 .122 R 0.15 C/W c 0.53 0.83 .021 .033 thCS D 25.91 26.16 1.020 1.030 E 19.81 19.96 .780 .786 e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 Safe Operating Area Specification L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Symbol Test Conditions Characteristic Values Q 6.07 6.27 .239 .247 Min. Typ. Max. Q1 8.38 8.69 .330 .342 R 3.81 4.32 .150 .170 SOA V = 2000V, I = 0.11A, T = 75C, tp = 3s 220 W R1 1.78 2.29 .070 .090 DS D C S 6.04 6.30 .238 .248 T 1.57 1.83 .062 .072 TM PLUS247 Outline Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 5 A S GS I Repetitive, Pulse Width Limited by T 20 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t I = 1.22.5A, -di/dt = 100A/s, V = 100V s rr F R Terminals: 1 - Gate 2 - Drain 3 - Source Note: 1. Pulse test, t 300s, duty cycle, d 2%. Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 2.29 2.54 .090 .100 A 1 A 1.91 2.16 .075 .085 2 b 1.14 1.40 .045 .055 b 1.91 2.13 .075 .084 1 ADVANCE TECHNICAL INFORMATION b 2.92 3.12 .115 .123 2 The product presented herein is under development. The Technical Specifications offered are derived C 0.61 0.80 .024 .031 from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a D 20.80 21.34 .819 .840considered reflectio of the anticipated result. IXYS reserves the right to change limits, test E 15.75 16.13 .620 .635 conditions, and dimensions without notice. e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537