Advance Technical Information TM TM TrenchT2 GigaMOS V = 40V IXTK600N04T2 DSS I = 600A Power MOSFET IXTX600N04T2 D25 R 1.5m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings G V T = 25C to 175C40V Tab DSS J D S V T = 25C to 175C, R = 1M 40 V DGR J GS V Transient 20 V GSM PLUS247 (IXTX) I T = 25C (Chip Capability) 600 A D25 C External Lead Current Limit 160 A I L(RMS) I T = 25C, Pulse Width Limited by T 1600 A DM C JM I T = 25C 200 A A C E T = 25C3J AS C G Tab D P T = 25C 1250 W S D C T -55 ... +175 C J G = Gate D = Drain T 175 C JM S = Source Tab = Drain T -55 ... +175 C stg T 1.6mm (0.062 in.) from Case for 10s 300 C L Features T Plastic Body for 10s 260 C SOLD z M Mounting Torque (TO-264) 1.13/10 Nm/lb.in. International Standard Packages d z High Current Handling Capability F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb. C z Fast Intrinsic Diode Weight TO-264 10 g z Avalanche Rated PLUS247 6 g z Low R DS(on) Advantages z Easy to Mount z Space Savings Symbol Test Conditions Characteristic Values z High Power Density (T = 25C Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 250A 40 V DSS GS D z V V = V , I = 250A 1.5 3.5 V DC-DC Converters and Off-Line UPS GS(th) DS GS D z Primary-Side Switch I V = 20V, V = 0V 200 nA z GSS GS DS High Speed Power Switching Applications I V = V , V = 0V 10 A DSS DS DSS GS T = 150C 1 mA J R V = 10V, I = 100A, Notes 1 & 2 1.5 m DS(on) GS D 2009 IXYS CORPORATION, All Rights Reserved DS100209(11/09)IXTK600N04T2 IXTX600N04T2 Symbol Test Conditions Characteristic Values TO-264 (IXTK) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 90 150 S fs DS D C 40 nF iss C V = 0V, V = 25V, f = 1MHz 6400 pF oss GS DS C 1470 pF rss R Gate Input Resistance 1.32 GI t 40 ns d(on) Resistive Switching Times t 20 ns r V = 10V, V = 0.5 V , I = 200A GS DS DSS D t 90 ns Millimeter Inches d(off) R = 1 (External) Dim. G Min. Max. Min. Max. t 250 ns A 4.82 5.13 .190 .202 f A1 2.54 2.89 .100 .114 A2 2.00 2.10 .079 .083 Q 590 nC g(on) b 1.12 1.42 .044 .056 Q V = 10V, V = 0.5 V , I = 0.5 I 127 nC b1 2.39 2.69 .094 .106 gs GS DS DSS D DSS b2 2.90 3.09 .114 .122 Q 163 nC c 0.53 0.83 .021 .033 gd D 25.91 26.16 1.020 1.030 R 0.12 C/W E 19.81 19.96 .780 .786 thJC e 5.46 BSC .215 BSC R 0.15 C/W J 0.00 0.25 .000 .010 thCS K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 Source-Drain Diode R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 Symbol Test Conditions Characteristic Values S 6.04 6.30 .238 .248 T 1.57 1.83 .062 .072 (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J TM I V = 0V 600 A PLUS 247 (IXTX) Outline S GS I Repetitive, Pulse Width Limited by T 1800 A SM JM V I = 100A, V = 0V, Note 1 1.2 V SD F GS t 100 ns rr I = 150A, V = 0V F GS I 3.3 A RM -di/dt = 100A/s Q 165 nC RM V = 20V R Notes 1. Pulse test, t 300s, duty cycle, d 2%. 2. Includes lead resistance. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 A 2.29 2.54 .090 .100 1 ADVANCE TECHNICAL INFORMATION A 1.91 2.16 .075 .085 2 b 1.14 1.40 .045 .055 The product presented herein is under development. The Technical Specifications offered are derived b 1.91 2.13 .075 .084 1 from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a b 2.92 3.12 .115 .123 2considered reflectio of the anticipated result. IXYS reserves the right to change limits, test C 0.61 0.80 .024 .031 conditions, and dimensions without notice. D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537