TM V = 1000V Polar IXTY08N100P DSS I = 0.8A Power MOSFET IXTA08N100P D25 R 20 DS(on) IXTP08N100P N-Channel Enhancement Mode Avalanche Rated TO-252 (IXTY) G S D (Tab) TO-263 (IXTA) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 1000 V DSS J G V T = 25 C to 150 C, R = 1M 1000 V DGR J GS S V Continuous 20 V GSS D (Tab) V Transient 30 V GSM TO-220 (IXTP) I T = 25 C 0.8 A D25 C I T = 25 C, Pulse Width Limited by T 1.5 A DM C JM I T = 25 C 0.8 A A C G D D (Tab) E T = 25 C80mJ S AS C dv/dt I I , V V , T 150C 10 V/ns S DM DD DSS J G = Gate D = Drain P T = 25 C42W D C S = Source Tab = Drain T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg Features T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD International Standard Packages Low Q F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb G C Avalanche Rated M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in d Low Package Inductance Weight TO-252 0.35 g Fast Intrinsic Rectifier TO-263 2.50 g TO-220 3.00 g Advantages High Power Density Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 250A 1000 V DSS GS D V V = V , I = 50A 2.0 4.0 V DC-DC Converters GS(th) DS GS D Switch-Mode and Resonant-Mode I V = 20V, V = 0V 50 nA Power Supplies GSS GS DS AC and DC Motor Drives I V = V , V = 0V 3 A DSS DS DSS GS Lasers Driverserators T = 125C 100 A J Robotics and Servo Controls R V = 10V, I = 0.5 I , Note 1 17 20 DS(on) GS D D25 2017 IXYS CORPORATION, All Rights Reserved DS99865D(8/17)IXTY08N100P IXTA08N100P IXTP08N100P Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 30V, I = 0.5 I , Note 1 0.35 0.60 S fs DS D D25 C 240 pF iss C V = 0V, V = 25V, f = 1MHz 18 pF oss GS DS C 3.6 pF rss Q 11.3 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 1.7 nC gs GS DS DSS D D25 Q 6.7 nC gd t 19 ns d(on) Resistive Switching Times t 37 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 35 ns d(off) R = 50 (External) G t 34 ns f R 3.0 C/W thJC R TO-220 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 0.8 A S GS I Repetitive, Pulse Width Limited by T 2.4 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS I = 0.8A, -di/dt = 100A/ s, V = 100V t 750 ns F R rr Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537