Preliminary Technical Information TM TrenchP V = - 150V IXTY10P15T DSS I = - 10A Power MOSFET IXTA10P15T D25 R 350m DS(on) IXTP10P15T P-Channel Enhancement Mode Avalanche Rated TO-252 (IXTY) G S D (Tab) TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G V T = 25 C to 150 C - 150 V DSS J S V T = 25 C to 150 C, R = 1M - 150 V DGR J GS D (Tab) V Continuous 15 V GSS TO-220 (IXTP) V Transient 25 V GSM I T = 25 C - 10 A D25 C I T = 25 C, Pulse Width Limited by T - 30 A DM C JM G D D (Tab) I T = 25 C - 10 A S A C E T = 25 C 200 mJ AS C P T = 25 C83W G = Gate D = Drain D C S = Source Tab = Drain T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L Features T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD International Standard Packages M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in d Avalanche Rated Weight TO-252 0.35 g Extended FBSOA TO-263 2.50 g Fast Intrinsic Diode TO-220 3.00 g Low R and Q DS(ON) G Advantages Symbol Test Conditions Characteristic Values Easy to Mount (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Space Savings High Power Density BV V = 0V, I = - 250A -150 V DSS GS D V V = V , I = - 250A - 2.0 - 4.5 V GS(th) DS GS D Applications I V = 15V, V = 0V 50 nA GSS GS DS High-Side Switching I V = V , V = 0V - 3 A Push Pull Amplifiers DSS DS DSS GS T = 125C - 100 A DC Choppers J Automatic Test Equipment R V = -10V, I = 0.5 I , Note 1 350 m DS(on) GS D D25 Current Regulators Battery Charger Applications 2017 IXYS CORPORATION, All Rights Reserved DS100290A(8/17)IXTY10P15T IXTA10P15T IXTP10P15T Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = 0.5 I , Note 1 5 9 S fs DS D D25 C 2210 pF iss C V = 0V, V = - 25V, f = 1MHz 146 pF oss GS DS C 43 pF rss t 19 ns d(on) Resistive Switching Times t 16 ns r V = -10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 40 ns d(off) R = 5 (External) G t 12 ns f Q 36 nC g(on) Q V = -10V, V = 0.5 V , I = 0.5 I 12 nC gs GS DS DSS D D25 Q 8 nC gd R 1.5 C/W thJC R TO-220 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V - 10 A S GS I Repetitive, Pulse Width Limited by T - 40 A SM JM V I = I , V = 0V, Note 1 -1.5 V SD F S GS t 120 ns rr I = 0.5 I , -di/dt = -100A/ s F D25 Q 530 nC RM V = - 100V, V = 0V R GS I - 9 A RM Note 1: Pulse test, t 300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537