X-On Electronics has gained recognition as a prominent supplier of IXTY1N80P MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXTY1N80P MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXTY1N80P IXYS

Name: IXTY1N80P
Brand: IXYS
SKU: IXTY1N80P_IXYS
Availability: OutOfStock
Rating: 5 (11 reviews)

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See Product Specifications

Part No.	IXTY1N80P
Manufacturer:	IXYS
Category:	MOSFETs
Description:	MOSFET POLAR MOSFET WITH REDUCED RDS 800V 1A
Datasheet:	IXTY1N80P Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 2.8224 ea
Line Total: USD 2.82

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

IXTY1N80P More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Wed. 04 Dec to Fri. 06 Dec MOQ : 1 Multiples : 1	1 : USD 2.8224 5 : USD 2.551 9 : USD 1.9132 23 : USD 1.8047

We are delighted to provide the IXTY1N80P from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXTY1N80P and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The IXTY1N80P with MOSFET POLAR MOSFET WITH REDUCED RDS 800V 1A is an N-channel enhancement mode field effect transistor, manufactured by IXYS. It is designed for application in DC-DC converters, AC-DC converters, motor control and other level shifted and polarity protection applications. The MOSFET has an RDS (on) of 0.0058 Ohm, maximum drain to source voltage of 800V and a maximum drain current of 1A. It is designed with a temperature-resistant package for efficient heat dissipation and reliable operation under extreme temperature conditions.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

CLR may also be referenced as

IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS

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Manufacturer IXYS IXYS
Product Category MOSFETs MOSFETs
RoHS - XON Y Y
Id - Continuous Drain Current 1 A 1 A
Vds - Drain-Source Breakdown Voltage 800 V 800 V
Rds On - Drain-Source Resistance 14 Ohms 14 Ohms
Transistor Polarity N - Channel N - Channel
Mounting Style Smd/Smt Smd/Smt
Package / Case TO - 252 - 3 TO - 252 - 3
Packaging Tube Tube
Technology Si Si
Number of Channels 1 Channel 1 Channel
Configuration Single Single
Series Ixty1n80 Ixty1n80
Transistor Type 1 N - Channel 1 N - Channel
Brand Ixys Ixys
Product Type Mosfet Mosfet
Factory Pack Quantity : 70 70
Subcategory Mosfets Mosfets