Depletion Mode V = 500V IXTY1R6N50D2 DSX MOSFET I > 1.6A IXTA1R6N50D2 D(on) R 2.3 IXTP1R6N50D2 DS(on) N-Channel D TO-252 (IXTY) G G S D (Tab) S TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings S V T = 25 C to 150 C 500 V DSX J D (Tab) V Continuous 20 V GSX TO-220 (IXTP) V Transient 30 V GSM P T = 25 C 100 W D C T - 55 ... +150 C J G T 150 C D JM S T - 55 ... +150 C D (Tab) stg T Maximum Lead Temperature for Soldering 300 C G = Gate D = Drain L S = Source Tab = Drain T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in. d Weight TO-252 0.35 g TO-263 2.50 g TO-220 3.00 g Features Normally ON Mode International Standard Packages Molding Epoxies Meet UL 94 V-0 Symbol Test Conditions Characteristic Values Flammability Classification (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Advantages BV V = - 5V, I = 250A 500 V DSX GS D Easy to Mount V V = 25V, I = 100 A - 2.5 - 4.5 V GS(off) DS D Space Savings High Power Density I V = 20V, V = 0V 100 nA GSX GS DS I V = V , V = - 5V 2 A DSX(off) DS DSX GS Applications T = 125C 25A J Audio Amplifiers R V = 0V, I = 0.8A, Note 1 2.3 DS(on) GS D Start-up Circuits Protection Circuits I V = 0V, V = 25V, Note 1 1.6 A D(on) GS DS Ramp Generators Current Regulators Active Loads 2018 IXYS CORPORATION, All Rights Reserved DS100179E(7/18)IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 30V, I = 0.8A, Note 1 1.00 1.75 S fs DS D C 645 pF iss C V = -10V, V = 25V, f = 1MHz 65 pF oss GS DS C 16.5 pF rss t 25 ns d(on) Resistive Switching Times t 70 ns r V = 5V, V = 250V, I = 0.8A GS DS D t 35 ns d(off) R = 5 (External) G t 41 ns f Q 23.7 nC g(on) Q V = 5V, V = 250V, I = 0.8A 2.2 nC gs GS DS D Q 13.8 nC gd R 1.25 C/W thJC R TO-220 0.50 C/W thCS Safe-Operating-Area Specification Characteristic Values Symbol Test Conditions Min. Typ. Max. SOA V = 400V, I = 0.15A, T = 75 C, Tp = 5s 60 W DS D C Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J V I = 1.6A, V = -10V, Note 1 0.8 1.3 V SD F GS t 400 ns rr I = 1.6A, -di/dt = 100A/ s F I 9.16 A RM V = 100V, V = -10V R GS Q 1.83 C RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537