TM Polar V = 500V IXTY1R6N50P DSS Power MOSFET I = 1.6A IXTP1R6N50P D25 R 6.5 DS(on) N-Channel Enhancement Mode Avalanche Rated TO-252 (IXTY) Fast Intrinsic Rectifier G S D (Tab) TO-220AB Symbol Test Conditions Maximum Ratings (IXTP) V T = 25 C to 150 C 500 V DSS J V T = 25 C to 150 C, R = 1M 500 V DGR J GS V Continuous 30 V GSS G D D (Tab) S V Transient 40 V GSM G = Gate D = Drain I T = 25 C 1.6 A D25 C S = Source Tab = Drain I T = 25 C, Pulse Width Limited by T 2.5 A DM C JM I T = 25 C 1.6 A A C E T = 25 C75 mJ AS C dv/dt I I , V V , T 150C 10 V/ns S DM DD DSS J Features P T = 25 C43 W D C T -55 ... +150 C International Standard Packages J Low Q T 150 C G JM Avalanche Rated T -55 ... +150 C stg Low Package Inductance Fast Intrinsic Rectifier T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Advantages F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb C M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in High Power Density d Easy to Mount Weight TO-252 0.35 g Space Savings TO-220 3.00 g Applications DC-DC Converters Switch-Mode and Resonant-Mode Symbol Test Conditions Characteristic Values Power Supplies (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J AC and DC Motor Drives BV V = 0V, I = 250 A 500 V DSS GS D Discharge Circiuts in Lasers, Spark Igniters, RF Generators V V = V , I = 25A 3.0 5.5 V GS(th) DS GS D High Voltage Pulse Power I V = 20V, V = 0V 50 nA Applications GSS GS DS I V = V , V = 0V 1 A DSS DS DSS GS T = 125C 50A J R V = 10V, I = 0.5 I , Notes 1, 2 6.5 DS(on) GS D D25 2017 IXYS CORPORATION, All Rights Reserved DS99444F(6/17) OBSOLETE IXTY1R6N50P IXTP1R6N50P Symbol Test Conditions Characteristic Values TO-252 AA Outline E AA (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J b3 L3 c2 4 g V = 20V, I = 0.5 I , Note 1 0.7 1.3 S fs DS D D25 A1 H L4 1 2 3 A2 C 140 pF iss L1 L C V = 0V, V = 25V, f = 1MHz 20 pF oss GS DS b2 1 - Gate c e L2 e1 2,4 - Drain e1 e1 e1 e1 e1 C 2.6 pF 0 rss 3 - Source 5.55MIN OPTIONAL t 20 ns d(on) Resistive Switching Times 6.50MIN 4 t 26 ns r 6.40 V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 45 ns d(off) 2.85MIN BOTTOM R = 50 (External) 2.28 1.25MIN VIEW G t 23 ns LAND PATTERN RECOMMENDATION f Q 3.9 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 1.4 nC gs GS DS DSS D D25 Q 1.3 nC gd R 2.9C/W thJC R TO-220 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 1.6 A S GS I Repetitive, Pulse Width Limited by T 5.0 A SM JM TO-220 Outline V I = I , V = 0V, Note 1 1.5 V F S GS SD t I = 400 ns 1.6A, V = 0V,-di/dt = 100A/s rr F GS V = 100V R Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. On through-hole package, R Kelvin test contact DS(on) 1 - Gate location must be 5mm or less from the package body. 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 OBSOLETE