TM V = 600V Polar IXTY2N60P DSS I = 2A Power MOSFET IXTP2N60P D25 R 5.1 DS(on) N-Channel Enhancement Mode Avalanche Rated TO-252 (IXTY) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXTP) V T = 25 C to 150 C 600 V DSS J V T = 25 C to 150 C, R = 1M 600 V DGR J GS V Continuous 30 V GSS G D D (Tab) V Transient 40 V S GSM I T = 25 C2A D25 C I T = 25 C, Pulse Width Limited by T 4A G = Gate D = Drain DM C JM S = Source Tab = Drain I T = 25 C2A A C E T = 25 C 150 mJ AS C dv/dt I I , V V , T 150C 10 V/ns S DM DD DSS J P T = 25 C56W D C Features T -55 ... +150 C J T 150 C JM International Standard Packages T -55 ... +150 C Low Q stg G Avalanche Rated T Maximum Lead Temperature for Soldering 300 C L Low Package Inductance T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Fast Intrinsic Rectifier M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in d Advantages Weight TO-252 0.35 g TO-220 3.00 g High Power Density Easy to Mount Space Savings Applications Symbol Test Conditions Characteristic Values DC-DC Converters (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Switch-Mode and Resonant-Mode Power Supplies BV V = 0V, I = 25A 600 V DSS GS D AC and DC Motor Drives Discharge Circiuts in Lasers, Spark V V = V , I = 250A 3.0 5.0 V GS(th) DS GS D Igniters, RF Generators I V = 30V, V = 0V 50 nA Robotics and Servo Controls GSS GS DS I V = V , V = 0V 1 A DSS DS DSS GS T = 125C 50 A J R V = 10V, I = 0.5 I , Note 1 5.1 DS(on) GS D D25 2017 IXYS CORPORATION, All Rights Reserved DS99422G(6/17) IXTY2N60P IXTP2N60P Symbol Test Conditions Characteristic Values TO-252 AA Outline A E A (T = 25C, Unless Otherwise Specified) Min. Typ. Max b3 L3 c2 J 4 g V = 20V, I = 0.5 I , Note 1 1.4 2.2 S fs DS D D25 A1 H C 240 pF L4 iss 1 2 3 A2 L1 C V = 0V, V = 25V, f = 1MHz 28 pF L oss GS DS b2 1 - Gate c e L2 C 3.5 pF e1 e1 e1 e1 e1 e1 2,4 - Drain rss 0 3 - Source 5.55MIN OPTIONAL Q 7.0 nC g(on) 6.50MIN Q V = 10V, V = 0.5 V , I = 0.5 I 2.5 nC gs GS DS DSS D D25 4 6.40 Q 2.1 nC gd 2.85MIN BOTTOM t 28 ns 2.28 d(on) 1.25MIN VIEW Resistive Switching Times LAND PATTERN RECOMMENDATION t 20 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 60 ns d(off) R = 50 (External) G t 23 ns f R 2.25 C/W thJC R TO-220 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J TO-220 Outline I V = 0V 2 A S GS A E oP A1 I Repetitive, Pulse Width Limited by T 6 A SM JM H1 Q V I = I , V = 0V, Note 1 1.5 V D2 SD F S GS D D1 I = 2A, -di/dt = 100A/ s, V = 100V t 400 ns F R rr E1 A2 EJECTOR PIN L1 L Note 1. Pulse test, t 300 s, duty cycle, d 2%. ee c 3X b e1e1 3X b2 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537