TM V = 600V Polar IXTU4N60P DSS I = 4A Power MOSFET IXTY4N60P D25 R 2 DS(on) IXTA4N60P TO-251 (IXTU) IXTP4N60P N-Channel Enhancement Mode G Avalanche Rated D S D (Tab) TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 600 V D (Tab) DSS J V T = 25 C to 150 C, R = 1M 600 V TO-263 (IXTA) DGR J GS V Continuous 30 V GSS G V Transient 40 V GSM S I T = 25 C4A D25 C D (Tab) I T = 25 C, Pulse Width Limited by T 10 A DM C JM TO-220 (IXTP) I T = 25 C4A A C E T = 25 C 150 mJ AS C dv/dt I I , V V , T 150C 10 V/ns S DM DD DSS J G D D (Tab) S P T = 25 C90W D C T -55 ... +150 C J G = Gate D = Drain T 150 C JM S = Source Tab = Drain T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L Features T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD International Standard Packages F Mounting Force (TO-263 & TO-251) 10..65 / 2.2..14.6 N/lb C Low Q G M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in d Avalanche Rated Weight TO-251 0.40 g Low Package Inductance TO-252 0.35 g Fast Intrinsic Rectifier TO-263 2.50 g TO-220 3.00 g Advantages High Power Density Symbol Test Conditions Characteristic Values Easy to Mount (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Space Savings BV V = 0V, I = 250A 600 V DSS GS D Applications V V = V , I = 100A 3.0 5.5 V GS(th) DS GS D DC-DC Converters I V = 30V, V = 0V 100 nA Switch-Mode and Resonant-Mode GSS GS DS Power Supplies I V = V , V = 0V 1 A DSS DS DSS GS AC and DC Motor Drives T = 125C 50 A Discharge Circiuts in Lasers, Spark J Igniters, RF Generators R V = 10V, I = 0.5 I , Note 1 2 DS(on) GS D D25 High Voltage Pulse Power Applications 2017 IXYS CORPORATION, All Rights Reserved DS99423F(6/17)IXTU4N60P IXTY4N60P IXTA4N60P IXTP4N60P Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 0.5 I , Note 1 2.8 4.6 S fs DS D D25 C 635 pF iss C V = 0V, V = 25V, f = 1MHz 65 pF oss GS DS C 5.7 pF rss Q 13 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 6 nC gs GS DS DSS D D25 Q 4 nC gd t 25 ns d(on) Resistive Switching Times t 10 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 50 ns d(off) R = 30 (External) G t 20 ns f R 1.4 C/W thJC R TO-220 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 4 A S GS I Repetitive, Pulse Width Limited by T 12 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS I = 4A, -di/dt = 100A/ s, V = 100V t 500 ns F R rr Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537