TM TrenchT2 V = 55V IXTI90N055T2 DSS I = 90A Power MOSFET IXTY90N055T2 D25 R 8.4m DS(on) IXTA90N055T2 N-Channel Enhancement Mode IXTP90N055T2 Avalanche Rated TO-252 (IXTY) G TO-262 (IXTI) S D (Tab) G TO-263 (IXTA) D S D (Tab) G S Symbol Test Conditions Maximum Ratings D (Tab) V T = 25 C to 175 C55 V DSS J TO-220 (IXTP) V T = 25 C to 175 C, R = 1M 55 V DGR J GS V Transient 20 V GSM I T = 25 C 90 A D25 C G I T = 25 C, Pulse Width Limited by T 230 A D DM C JM S D (Tab) I T = 25 C50 A A C G = Gate D = Drain E T = 25 C 300 mJ AS C S = Source Tab = Drain P T = 25 C 150 W D C T -55 ... +175 C Features J T 175 C JM International Standard Packages T -55 ... +175 C Avalanche Rated stg Low Package Inductance T Maximum Lead Temperature for Soldering 300 C L Fast Intrinsic Rectifier T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD 175C Operating Temperature High Current Handling Capability F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb C ROHS Compliant M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in d High Performance Trench Weight TO-252 0.35 g Technology for extremely low R TO-262 (Lead) 0.40 g DS(on) TO-263 2.50 g TO-220 3.00 g Advantages High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 250 A 55 V Applications DSS GS D V V = V , I = 250 A 2.0 4.0 V GS(th) DS GS D Automotive Engine Control Synchronous Buck Converter I V = 20V, V = 0V 200 nA GSS GS DS (for Notebook SystemPower & I V = V , V = 0V 2 A DSS DS DSS GS General Purpose Point & Load) T = 150C 200 A DC/DC Converters J High Current Switching Applications R V = 10V, I = 25A, Notes 1 & 2 7.0 8.4 m DS(on) GS D Power Train Management Distributed Power Architecture 2018 IXYS CORPORATION, All Rights Reserved DS99956D(11/18) IXTI90N055T2 IXTY90N055T2 IXTA90N055T2 IXTP90N055T2 Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 45A, Note 1 25 43 S fs DS D C 2770 pF iss C V = 0V, V = 25V, f = 1MHz 420 pF oss GS DS C 102 pF rss t 19 ns d(on) Resistive Switching Times t 21 ns r V = 10V, V = 30V, I = 25A GS DS D t 39 ns d(off) R = 5 (External) G t 19 ns f Q 42 nC g(on) Q V = 10V, V = 30V, I = 25A 14 nC gs GS DS D Q 8.5 nC gd R 1.00 C/W thJC R TO-220 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 90 A S GS I Repetitive, Pulse Width Limited by T 360 A SM JM V I = 25A, V = 0V, Note 1 0.85 1.00 V SD F GS t 37 ns rr I = 45A, V = 0V, F GS I 2.2 A RM -di/dt = 100A/s, V = 27V R Q 40 nC RM Notes: 1. Pulse test, t 300 s duty cycle, d 2%. 2. On through-hole packages, R Kelvin test contact DS(on) location must be 5mm or less from the package body. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537