25LC1024T-E/MF Microchip

25LC1024 1-Mbit SPI Bus Serial EEPROM Device Selection Table Part Number VCC Range Page Size Temp. Ranges Packages 25LC1024 2.5V-5.5V 256 Bytes I, E MF, P, SM Features Pin Function Table 20 MHz Maximum Clock Speed Name Function Byte and Page-Level Write Operations: Chip Select Input CS - 256-byte page - 6 ms maximum write cycle time SO Serial Data Output - No page or sector erase required WP Write-Protect Low-Power CMOS Technology: VSS Ground - Maximum Write current: 5 mA at 5.5V, SI Serial Data Input 20 MHz - Read current: 7 mA at 5.5V, 20 MHz SCK Serial Clock Input - Standby current: 1 A at 2.5V HOLD Hold Input (Deep power-down) VCC Supply Voltage Electronic Signature for Device ID Self-Timed Erase and Write Cycles: Description - Page Erase (6 ms maximum) - Sector Erase (10 ms maximum) The Microchip Technology Inc. 25LC1024 is a - Chip Erase (10 ms maximum) 1024-Kbit serial EEPROM memory with byte-level and Sector Write Protection (32K byte/sector): page-level serial EEPROM functions. It also features - Protect none, 1/4, 1/2 or all of array Page, Sector and Chip erase instructions typically associated with Flash-based products. These instruc- Built-In Write Protection: tions are not required for byte or page write operations. - Power-on/off data protection circuitry The memory is accessed via a simple Serial Peripheral - Write enable latch Interface (SPI) compatible serial bus. The bus signals - Write-protect pin required are a clock input (SCK) plus separate data in High Reliability: (SI) and data out (SO) lines. Access to the device is - Endurance: 1M erase/write cycles controlled by a Chip Select (CS) input. - Data Retention: >200 years Communication to the device can be paused via the - ESD Protection: >4000V hold pin (HOLD). While the device is paused, transi- Temperature Ranges Supported: tions on its inputs will be ignored, with the exception of - Industrial (I): -40 Cto +85C Chip Select, allowing the host to service higher priority - Extended (E): -40C to +125C interrupts. RoHS Compliant Automotive AEC-Q100 Qualified Packages 8-Lead DFN-S, 8-Lead PDIP and 8-Lead SOIJ Package Types (not to scale) 8-Lead DFN-S PDIP/SOIJ (Top View) (Top View) 1 CS 8 VCC CS 1 8 VCC 2 SO 7 HOLD SO 2 7 HOLD 3 WP 6 SCK 3 6 WP SCK VSS 4 4 5 SI VSS 5 SI 2007-2021 Microchip Technology Inc. DS20002064E-page 125LC1024 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................6.5V SS ......................................................................................................... -0.6V to VCC +1.0V All inputs and outputs w.r.t. V Storage temperature ...............................................................................................................................-65C to +150C Ambient temperature under bias.............................................................................................................-40C to +125C ESD protection on all pins..........................................................................................................................................4 kV NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended period of time may affect device reliability. TABLE 1-1: DC CHARACTERISTICS Industrial (I): TA = -40C to +85C VCC = 2.5V to 5.5V DC CHARACTERISTICS Extended (E): TA = -40C to +125C VCC = 2.5V to 5.5V Param. Symbol Characteristic Min. Max. Units Test Conditions No. D001 VIH1 High-Level Input Voltage 0.7 VCC VCC +1 V D002 VIL1 -0.3 0.3 VCC VVCC2.7V Low-Level Input Voltage D003 VIL2 -0.3 0.2 VCC VVCC < 2.7V D004 VOL Low-level Output Voltage 0.4 V IOL = 2.1 mA D005 VOH High-Level Output Voltage VCC -0.2 V IOH = -400 A LI Input Leakage Current 1 A CS = VCC, VIN = VSS or VCC D006 I D007 ILO Output Leakage Current 1 A CS = VCC, VOUT = VSS or VCC Internal Capacitance TA = +25C, CLK = 1.0 MHz, D008 CINT 7 pF (all inputs and outputs) VCC = 5.0V (Note 1) VCC = 5.5V FCLK = 20.0 MHz 10 mA SO = Open D009 ICC Read VCC = 2.5V FCLK = 10.0 MHz 5 mA Operating Current SO = Open 7 mAVCC = 5.5V D010 ICC Write 5 mAVCC = 2.5V CS = VCC = 5.5V, Inputs tied to 20 A VCC or VSS, +125C D011 ICCS Standby Current = VCC = 5.5V, Inputs tied to CS 12 A VCC or VSS, +85C CS = VCC = 2.5V, Inputs tied to 1 A VCC or VSS, +85C D012 ICCSPD Deep Power-Down Current CS = VCC = 2.5V, Inputs tied to 2 A VCC or VSS, +125C Note 1: This parameter is periodically sampled and not 100% tested. DS20002064E-page 2 2007-2021 Microchip Technology Inc.