2N7002P,215

2N7002P 60 V, 360 mA N-channel Trench MOSFET 23 November 2020 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 3. Applications Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 60 V DS amb V gate-source voltage -20 - 20 V GS I drain current V = 10 V T = 25 C 1 - - 360 mA D GS amb Static characteristics R drain-source on-state V = 10 V I = 500 mA pulsed t - 1 1.6 DSon GS D p resistance 300 s 0.01 T = 25 C j 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .Nexperia 2N7002P 60 V, 360 mA N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 3 1 G gate D 2 S source G 3 D drain mbb076 S 1 2 SOT23 6. Ordering information Table 3. Ordering information Type number Package Name Description Version 2N7002P SOT23 plastic, surface-mounted package 3 terminals 1.9 mm pitch 2.9 SOT23 mm x 1.3 mm x 1 mm body 7. Marking Table 4. Marking codes Type number Marking code 1 LW% 2N7002P 1 % = placeholder for manufacturing site code 2N7002P All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 23 November 2020 2 / 15