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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.BC638 PNP Epitaxial Silicon Transistor
June 2016
BC638
PNP Epitaxial Silicon Transistor
Features
Switching and Amplifier Applications
Complement to BC637
TO-92
1. Emitter
2. Collector
1 1
3. Base
2
3 2
3
Straight Lead Bent Lead
Bulk Packing Tape & Reel
Ammo Packing
Ordering Information
Part Number Top Mark Package Packing Method
BC638TA BC638 TO-92 3L Ammo
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted.
A
Symbol Parameter Value Unit
V Collector-Emitter Voltage at R = 1 K -60 V
CER BE
V Collector-Emitter Voltage -60 V
CES
V Collector-Emitter Voltage -60 V
CEO
V Emitter-Base Voltage -5 V
EBO
I Collector Current -1 A
C
I Peak Collector Current -1.5 A
CP
I Base Current -100 mA
B
T Junction Temperature 150 C
J
T Storage Temperature -65 to 150 C
STG
2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC638 Rev. 1.6