MC74VHC86 Quad 2-Input XOR Gate The MC74VHC86 is an advanced high speed CMOS 2input ExclusiveOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer MC74VHC86 MAXIMUM RATINGS Symbol Parameter Value Unit This device contains protection circuitry to guard against damage V DC Supply Voltage 0.5 to +7.0 V CC due to high static voltages or electric V DC Input Voltage 0.5 to +7.0 V fields. However, precautions must in be taken to avoid applications of any V DC Output Voltage 0.5 to V +0.5 V out CC voltage higher than maximum rated I Input Diode Current 20 mA voltages to this highimpedance cir- IK cuit. For proper operation, V and in I Output Diode Current 20 mA OK V should be constrained to the out range GND (V or V ) V . I DC Output Current, per Pin 25 mA out in out CC Unused inputs must always be I DC Supply Current, V and GND Pins 50 mA CC CC tied to an appropriate logic voltage level (e.g., either GND or V ). P Power Dissipation in Still Air, SOIC Package 500 mW CC D 450 Unused outputs must be left open. TSSOP Package T Storage Temperature 65 to +150 C stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Derating SOIC Package: 7 mW/C from 65 to 125C TSSOP Package: 6.1 mW/C from 65 to 125C RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit V DC Supply Voltage 2.0 5.5 V CC V DC Input Voltage 0 5.5 V in V DC Output Voltage 0 V V out CC T Operating Temperature, All Package Types 55 +125 C A t , t Input Rise and Fall Time V = 3.3 V 0.3 V 0 100 ns/V r f CC 0 20 V = 5.0 V 0.5 V CC Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.