NST857BDP6T5G Dual General Purpose Transistor The NST857BDP6T5G device is a spin off of our popular SOT23/SOT323/SOT563 threeleaded device. It is designed for general purpose amplifier applications and is housed in the SOT963 sixleaded surface mount package. By putting two discrete devices in www.onsemi.com one package, this device is ideal for lowpower surface mount applications where board space is at a premium. (3) (2) (1) Features h , 220475 FE Low V , 0.3 V CE(sat) Q Q 1 2 Simplifies Circuit Design Reduces Board Space (4) (5) (6) Reduces Component Count NST857BDP6T5G This is a PbFree Device MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V 45 Vdc CEO Collector Base Voltage V 50 Vdc CBO Emitter Base Voltage V 6.0 Vdc EBO Collector Current Continuous I 100 mAdc C SOT963 Electrostatic Discharge HBM ESD 2 CASE 527AD MM Class B THERMAL CHARACTERISTICS Characteristic (Single Heated) Symbol Max Unit MARKING DIAGRAM Total Device Dissipation T = 25C P 240 mW A D Derate above 25C (Note 1) 1.9 mW/C K M Thermal Resistance, Junction-to-Ambient R 520 C/W JA (Note 1) 1 Total Device Dissipation T = 25C P 280 mW A D Derate above 25C (Note 2) 2.2 mW/C K = Device Code Thermal Resistance, Junction-to-Ambient R 446 C/W JA M = Date Code (Note 2) Characteristic (Dual Heated) (Note 3) Symbol Max Unit Total Device Dissipation T = 25C P 350 mW A D ORDERING INFORMATION Derate above 25C (Note 1) 2.8 mW/C Device Package Shipping Thermal Resistance, Junction-to-Ambient R 357 C/W JA (Note 1) NST857BDP6T5G SOT963 8000/Tape & Reel Total Device Dissipation T = 25C P 420 mW A D (PbFree) Derate above 25C (Note 2) 3.4 mW/C For information on tape and reel specifications, Thermal Resistance, Junction-to-Ambient R 297 C/W JA including part orientation and tape sizes, please (Note 2) refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Junction and Storage Temperature Range T , T 55 to C J stg +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 1. FR4 100 mm , 1 oz. copper traces, still air. 2 2. FR4 500 mm , 1 oz. copper traces, still air. 3. Dual heated values assume total power is sum of two equally powered channels. Semiconductor Components Industries, LLC, 2008 1 Publication Order Number: June, 2017 Rev. 1 NST857BDP6/DNST857BDP6T5G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (I = 10 mA) V 45 V C (BR)CEO Collector Emitter Breakdown Voltage (I = 10 A, V = 0) V 50 V C EB (BR)CES Collector Base Breakdown Voltage (I = 10 A) V 50 V C (BR)CBO V 5.0 V Emitter Base Breakdown Voltage (I = 1.0 A) E (BR)EBO Collector Cutoff Current (V = 30 V) I 15 nA CB CBO Collector Cutoff Current (V = 30 V, T = 150C) 4.0 A CB A ON CHARACTERISTICS DC Current Gain h FE (I = 10 A, V = 5.0 V) 150 C CE (I = 2.0 mA, V = 5.0 V) 220 290 475 C CE Collector Emitter Saturation Voltage V V CE(sat) (I = 10 mA, I = 0.5 mA) 0.3 C B (I = 100 mA, I = 5.0 mA) 0.7 C B Base Emitter Saturation Voltage V V BE(sat) (I = 10 mA, I = 0.5 mA) 0.7 C B (I = 100 mA, I = 5.0 mA) 0.9 C B Base Emitter On Voltage V V BE(on) (I = 2.0 mA, V = 5.0 V) 0.6 0.75 C CE (I = 10 mA, V = 5.0 V) 0.82 C CE SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f 100 MHz T (I = 10 mA, V = 5.0 Vdc, f = 100 MHz) C CE Output Capacitance C 4.5 pF obo (V = 10 V, f = 1.0 MHz) CB Input Capacitance C 10 pF ibo (V = 0.5 V, f = 1.0 MHz) EB Noise Figure NF 10 dB (I = 0.2 mA, V = 5.0 Vdc, R = 2.0 k , C CE S f = 1.0 kHz, BW = 200 Hz) 0.18 800 I /I = 10 150C (5.0 V) C B 0.16 700 0.14 600 V = 150C CE(sat) 150C (1.0 V) 0.12 500 25C (5.0 V) 0.10 400 25C 25C (1.0 V) 0.08 300 55C (5.0 V) 0.06 200 55C (1.0 V) 55C 0.04 100 0 0.02 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 I , COLLECTOR CURRENT (A) I , COLLECTOR CURRENT (A) C C Figure 1. Collector Emitter Saturation Voltage vs. Figure 2. DC Current Gain vs. Collector Current Collector Current www.onsemi.com 2 V , COLLECTOREMITTER CE(sat) SATURATION VOLTAGE (V) h , DC CURRENT GAIN (V) FE