2 EEPROM Serial 1-Mb I C - Automotive Grade 1 in Wettable Flank UDFN8 Package NV24M01MUW www.onsemi.com Description 2 The NV24M01MUW is a EEPROM Serial 1Mb I C Automotive Grade 1, internally organized as 131,072 words of 8 bits each. 1 It features a 256byte page write buffer and supports the Standard 2 UDFN8 (100 kHz), Fast (400 kHz) and FastPlus (1 MHz) I C protocol. (Wettable Flank) Write operations can be inhibited by taking the WP pin High (this MUW3 SUFFIX protects the entire memory). CASE 517DH External address pins make it possible to address up to four NV24M01MUW devices on the same bus. MARKING DIAGRAM OnChip ECC (Error Correction Code) makes the device suitable for high reliability applications. 1 CAW AWLYW Features Automotive AECQ100 Grade 1 (40C to +125C) Qualified CAW = Specific Device Code 1.8 V to 5.5 V Supply Voltage Range A = Assembly Location WL = Wafer Lot 256Byte Page Write Buffer Y = Year Hardware Write Protection for Entire Memory W = Work Week 2 Schmitt Triggers and Noise Suppression Filters on I C Bus Inputs = PbFree Package (SCL and SDA) Low Power CMOS Technology PIN CONFIGURATION 1,000,000 Program/Erase Cycles NC V CC 100 Year Data Retention A WP 1 Industrial and Extended Temperature Range A SCL 2 8pad UDFN Wettable Flank Package V SDA SS These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant UDFN8 V CC PIN FUNCTION Pin Name Function SCL A , A Device Address 1 2 SDA Serial Data NV24M01WF SDA A , A 2 1 SCL Serial Clock WP Write Protect WP V Power Supply CC V Ground SS V SS Figure 1. Functional Symbol ORDERING INFORMATION See detailed ordering and shipping information on page 9 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: April, 2021 Rev. 5 NV24M01MUW/DNV24M01MUW Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Storage Temperature 65 to +150 C Voltage on any Pin with Respect to Ground (Note 1) 0.5 to +6.5 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The DC input voltage on any pin should not be lower than 0.5 V or higher than V + 0.5 V. During transitions, the voltage on any pin may CC undershoot to no less than 1.5 V or overshoot to no more than V + 1.5 V, for periods of less than 20 ns. CC Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Units N (Notes 3, 4) Endurance 1,000,000 Program/Erase Cycles END T Data Retention 100 Years DR 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 3. Test Condition: Page Mode, V = 5 V, 25C. CC 4. The device uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when a single byte has to be written, 4 bytes (including the ECC bits) are re-programmed. It is recommended to write by multiple of 4 bytes in order to benefit from the maximum number of write cycles. Table 3. DC OPERATING CHARACTERISTICS V = 1.8 V to 5.5 V, T = 40C to +125C, unless otherwise specied. CC A Symbol Parameter Test Conditions Min Max Units I Read Current Read, f = 1 MHz 1 mA CCR SCL I Write Current 8.0 mA CCW I Standby Current All I/O Pins at GND or V T = 40C to +85C 2 A SB CC A T = 40C to +125C 5 A I I/O Pin Leakage Pin at GND or V T = 40C to +85C 1 A L CC A T = 40C to +125C 2 A V Input Low Voltage 2.5 V V 5.5 V 0.5 0.3 V V IL1 CC CC V Input Low Voltage 1.8 V V < 2.5 V 0.5 0.2 V V IL2 CC CC V Input High Voltage 2.5 V V 5.5 V 0.7 V V + 0.5 V IH1 CC CC CC V Input High Voltage 1.8 V V < 2.5 V 0.8 V V + 0.5 V IH2 CC CC CC V Output Low Voltage V 2.5 V, I = 3.0 mA 0.4 V OL1 CC OL V Output Low Voltage V < 2.5 V, I = 1.0 mA 0.2 V OL2 CC OL www.onsemi.com 2