The SBC857BWT1G is a Bipolar Junction Transistor (BJT) manufactured by ON Semiconductor. It is a surface-mount device with a PNP structure. Its collector-emitter voltage is 45 V, operating temperature is -55°C to 175°C, power dissipation is 500 mW, and it is a general purpose transistor. It is designed to be used in a wide variety of applications, including amplifiers, switching circuits, and converters. The SBC857BWT1G is fully RoHS compliant and compliant with current standards and guidelines. It is available in a wide variety of packages, including TO-92, SOT-223, and SOT-89.