X-On Electronics has gained recognition as a prominent supplier of MJD47T4 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MJD47T4 Bipolar Transistors - BJT are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MJD47T4 STMicroelectronics

MJD47T4 electronic component of STMicroelectronics
Images are for reference only
See Product Specifications
Part No. MJD47T4
Manufacturer: STMicroelectronics
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT NPN Hi-Volt Fast Sw
Datasheet: MJD47T4 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.2028 ea
Line Total: USD 507 
Availability - 7275
Ship by Fri. 06 Sep to Thu. 12 Sep
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
2056
Ship by Fri. 06 Sep to Thu. 12 Sep
MOQ : 1
Multiples : 1
1 : USD 1.0976
10 : USD 0.8831
25 : USD 0.8664
100 : USD 0.6343
250 : USD 0.5804
500 : USD 0.5342
1000 : USD 0.4601

7275
Ship by Fri. 06 Sep to Thu. 12 Sep
MOQ : 2500
Multiples : 2500
2500 : USD 0.2028
5000 : USD 0.2028
7500 : USD 0.2028
10000 : USD 0.2028
12500 : USD 0.2028

2134
Ship by Fri. 06 Sep to Thu. 12 Sep
MOQ : 17
Multiples : 1
17 : USD 0.8831
25 : USD 0.8664
100 : USD 0.6343
250 : USD 0.5804
500 : USD 0.5342
1000 : USD 0.4601

2425
Ship by Fri. 06 Sep to Thu. 12 Sep
MOQ : 2500
Multiples : 2500
2500 : USD 0.3375
10000 : USD 0.3341
25000 : USD 0.3308

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MJD47T4 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJD47T4 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MJD47 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIXT4 ) ELECTRICALLY SIMILAR TO TIP47 3 APPLICATIONS 1 SWITCH MODE POWER SUPPLIES AUDIO AMPLIFIERS DPAK GENERAL PURPOSE SWITCHING AND TO-252 AMPLIFIER (SuffixT4 ) DESCRIPTION The MJD47 is manufactured using Medium Voltage Epitaxial Planar technology, resulting in a rugged high performance cost-effective transistor. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Base Voltage (I = 0) 350 V CBO E V Collector-Emitter Voltage (I = 0) 250 V CEO B V Emitter-Base Voltage (I = 0) 5 V EBO C I Collector Current 1 A C I Collector Peak Current (t < 5 ms) 2 A CM p I Base Current 0.6 A B I Base Peak Current (t < 5 ms) 1.2 A BM p o P Total Dissipation at T = 25 C15 W tot c o T Storage Temperature -65 to 150 C stg o T Max. Operating Junction Temperature 150 C j 1/6 January 2000 MJD47 THERMAL DATA o R Thermal Resistance Junction-case Max 8.33 C/W thj-case o R Thermal Resistance Junction-ambient Max 100 C/W thj-amb o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = 350 V 0.1 mA CES CE Current (V = 0) BE I Collector Cut-off V = 150 V 0.1 mA CEO CE Current (I = 0) B I Emitter Cut-off Current V = 5 V 1 mA EBO EB (I = 0) C V * Collector-Emitter I = 30 mA 250 V CEO(sus) C Sustaining Voltage (I = 0) B V * Collector-Emitter I = 1 A I = 0.2 A 1 V CE(sat) C B Saturation Voltage V * Base-Emitter On I = 1 A V = 10 V 1.5 V BE(on) C CE Voltage h * DC Current Gain I = 0.3 A V = 10 V 30 150 FE C CE I = 1 A V = 10 V 10 C CE f Transition Frequency I = 0.2 A V = 10 V f = 2MHz 10 MHz T C CE h Small Signal Current I = 0.2 A V = 10 V f = 1KHz 25 fe C CE Gain * Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Safe Operating Area Derating Curves 2/6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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