RN2114MFV to RN2118MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2114MFV, RN2115MFV, RN2116MFV RN2117MFV, RN2118MFV Unit: mm Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Ultra-small package, suited to very high density mounting Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering assembly cost. A wide range of resistor values is available for use in various circuits. Complementary to the RN1114MFV to RN1118MFV Equivalent Circuit and Bias Resistor Values Type No. R1 (k ) R2 (k ) RN2114MFV 1 10 1.BASE 2.EMITTER RN2115MFV 2.2 10 VESM 3.COLLECTOR RN2116MFV 4.7 10 JEDEC RN2117MFV 10 4.7 JEITA RN2118MFV 47 10 TOSHIBA 1-1Q1S Weight: 1.5 mg (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector-base voltage RN2114MFV V 50 V CBO to Collector-emitter voltage V 50 V CEO RN2118MFV RN2114MFV 5 RN2115MFV 6 Emitter-base voltage RN2116MFV V 7 V EBO RN2117MFV 15 RN2118MFV 25 Collector current I 100 mA C RN2114MFV Collector power dissipation P (Note1) 150 mW C to Junction temperature T 150 C j RN2118MFV Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (25.4 mm 25.4 mm 1.6 mm) Start of commercial production 2005-02 2016-2019 2019-01-07 1 Toshiba Electronic Devices & Storage Corporation RN2114MFV to RN2118MFV Land Pattern Dimensions (for reference only) unit: mm 0.5 0.45 1.15 0.4 0.45 0.4 0.4 Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit I V = 50 V, I = 0 A 100 CBO CB E Collector cut-off RN2114MFV to 2118MFV nA current I V = 50 V, I = 0 A 500 CEO CE B RN2114MFV V = 5 V, I = 0 A 0.35 0.65 EB C RN2115MFV V = 6 V, I = 0 A 0.37 0.71 EB C Emitter cut-off current RN2116MFV I V = 7 V, I = 0 A 0.36 0.68 mA EBO EB C RN2117MFV V = 15 V, I = 0 A 0.78 1.46 EB C RN2118MFV V = 25 V, I = 0 A 0.33 0.63 EB C RN2114MFV to 16MFV, 50 18MFV DC current gain h V = 5 V, I = 10 mA FE CE C RN2117MFV 30 Collector-emitter RN2114MFV to 2118MFV V I = 5 mA, I = 0.5 mA 0.1 0.3 V CE(sat) C B saturation voltage RN2114MFV 0.5 2.0 0.6 2.5 RN2115MFV Input voltage (ON) RN2116MFV V V = 0.2 V, I = 5 mA 0.7 2.5 V I (ON) CE C 1.5 3.5 RN2117MFV 10.0 RN2118MFV 2.5 RN2114MFV 0.3 0.9 RN2115MFV 0.3 1.0 Input voltage (OFF) RN2116MFV V V = 5 V, I = 0.1 mA 0.3 1.1 I (OFF) CE C V RN2117MFV 0.3 3.0 RN2118MFV 0.5 5.7 V = 10 V, I = 0 A, CB E Collector output RN2114MFV to 2118MFV C 0.9 pF ob capacitance f = 1 MHz RN2114MFV 0.7 1.0 1.3 RN2115MFV 1.54 2.2 2.86 Input resistor RN2116MFV R1 3.29 4.7 6.11 k RN2117MFV 7.0 10.0 13.0 RN2118MFV 32.9 47 61.1 0.1 RN2114MFV RN2115MFV 0.22 Resistor ratio R1/R2 0.47 RN2116MFV RN2117MFV 2.13 4.7 RN2118MFV 2016-2019 2019-01-07 2 Toshiba Electronic Devices & Storage Corporation